Assignee
SHIMA MASASHI
JP·18 granted patents·1 pending application·33 citations·filing 2006–2012
Top patents by PatentIndex Score
19 records- 0182US8106467B2Semiconductor device having carrier mobility raised by generating strain in channel regionSHIMA MASASHI·Filed 2006·Granted Jan 31, 2012·10 cites·16 claims
- 0278US8080845B2Semiconductor deviceSHIMA MASASHI·Filed 2009·Granted Dec 20, 2011·7 cites·2 claims
- 0378US8072031B2P-channel MOS transistor and semiconductor integrated circuit deviceSHIMA MASASHI·Filed 2008·Granted Dec 6, 2011·6 cites·6 claims
- 0473US8552511B2Semiconductor device and manufacturing method thereofSHIMA MASASHI·Filed 2011·Granted Oct 8, 2013·3 cites·5 claims
- 0571US8603874B2Method of manufacturing semiconductor deviceSHIMA MASASHI·Filed 2010·Granted Dec 10, 2013·2 cites·14 claims
- 0665US8987106B2Semiconductor device manufacturing methodSHIMA MASASHI·Filed 2011·Granted Mar 24, 2015·2 cites·7 claims
- 0762US8067291B2MOS field-effect transistor and manufacturing method thereofSHIMA MASASHI·Filed 2007·Granted Nov 29, 2011·2 cites·8 claims
- 0861US8222701B2P-channel MOS transistor and semiconductor integrated circuit deviceSHIMA MASASHI·Filed 2011·Granted Jul 17, 2012·1 cites·4 claims
- 0953US8188553B2Semiconductor device and method for making the sameSHIMA MASASHI·Filed 2007·Granted May 29, 2012·0 cites·10 claims
- 1052US8841725B2Semiconductor device having channel dose region and method for manufacturing semiconductor deviceSHIMA MASASHI·Filed 2010·Granted Sep 23, 2014·0 cites·8 claims
- 1152US8143675B2Semiconductor device and method of manufacturing semiconductor deviceSHIMA MASASHI·Filed 2009·Granted Mar 27, 2012·0 cites·12 claims
- 1252US2012208336A1Semiconductor device and method for manufacturing semiconductor deviceSHIMA MASASHI·Filed 2012·Application pending·0 cites
- 1351US8497178B2Semiconductor device and method for making the sameSHIMA MASASHI·Filed 2012·Granted Jul 30, 2013·0 cites·10 claims
- 1451US8158498B2P-channel MOS transistor and fabrication process thereofSHIMA MASASHI·Filed 2009·Granted Apr 17, 2012·0 cites·6 claims
- 1548US8697531B2Method for fabricating a semiconductor device having stress/strain and protrusionSHIMA MASASHI·Filed 2012·Granted Apr 15, 2014·0 cites·6 claims
- 1647US8686501B2Semiconductor device with high voltage transistorSHIMA MASASHI·Filed 2010·Granted Apr 1, 2014·0 cites·15 claims
- 1747US8329528B2Semiconductor device and method of manufacturing semiconductor deviceSHIMA MASASHI·Filed 2012·Granted Dec 11, 2012·0 cites·8 claims
- 1845US8410550B2Breakdown voltage MOS semiconductor deviceSHIMA MASASHI·Filed 2010·Granted Apr 2, 2013·0 cites·9 claims
- 1941US8735945B2Semiconductor deviceSHIMA MASASHI·Filed 2011·Granted May 27, 2014·0 cites·19 claims
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