Assignee
SHANGHAI INST MICROSYS & INF
CN·10 granted patents·6 pending applications·44 citations·filing 2007–2013
Top patents by PatentIndex Score
16 records- 0193US8350298B2Hybrid material inversion mode GAA CMOSFETSHANGHAI INST MICROSYS & INF·Filed 2010·Granted Jan 8, 2013·26 cites·18 claims
- 0274US8828812B2Silicon-germanium heterojunction tunnel field effect transistor and preparation method thereofSHANGHAI INST MICROSYS & INF·Filed 2012·Granted Sep 9, 2014·4 cites·18 claims
- 0374US8377755B2Method for fabricating SOI high voltage power chip with trenchesSHANGHAI INST MICROSYS & INF·Filed 2010·Granted Feb 19, 2013·5 cites·7 claims
- 0474US8354721B2Gate-all-around CMOSFET devicesSHANGHAI INST MICROSYS & INF·Filed 2010·Granted Jan 15, 2013·4 cites·20 claims
- 0568US9276202B2Phase-change storage unit containing TiSiN material layer and method for preparing the sameSHANGHAI INST MICROSYS & INF·Filed 2012·Granted Mar 1, 2016·2 cites·12 claims
- 0659US7550358B2MEMS device including a laterally movable portion with piezo-resistive sensing elements and electrostatic actuating elements on trench side walls, and methods for producing the sameSHANGHAI INST MICROSYS & INF·Filed 2007·Granted Jun 23, 2009·1 cites·18 claims
- 0757US8354714B2SOI MOS device having BTS structure and manufacturing method thereofSHANGHAI INST MICROSYS & INF·Filed 2010·Granted Jan 15, 2013·1 cites·10 claims
- 0854US8354330B2Method of fabricating SOI super-junction LDMOS structure capable of completely eliminating substrate-assisted depletion effectsSHANGHAI INST MICROSYS & INF·Filed 2010·Granted Jan 15, 2013·1 cites·8 claims
- 0948US2014192592A1Sb-te-ti phase-change memory material and ti-sb2te3 phase-change memory materialSHANGHAI INST MICROSYS & INF·Filed 2012·Application pending·0 cites
- 1042US2014291597A1High-speed, High-density, and Low-power consumption Phase-change Memory Unit, and Preparation Method ThereofSHANGHAI INST MICROSYS & INF·Filed 2012·Application pending·0 cites
- 1140US2014029123A1Interior side mirror for side blind spot of a carSHANGHAI INST MICROSYS & INF·Filed 2013·Application pending·0 cites
- 1239US2015325468A1Method for preparing material on insulator based on enhanced adsorptionSHANGHAI INST MICROSYS & INF·Filed 2013·Application pending·0 cites
- 1333US8354310B2SOI MOS device having a source/body ohmic contact and manufacturing method thereofSHANGHAI INST MICROSYS & INF·Filed 2010·Granted Jan 15, 2013·0 cites·6 claims
- 1433US2011221002A1Mos-type esd protection device in soi and manufacturing method thereofSHANGHAI INST MICROSYS & INF·Filed 2010·Application pending·0 cites
- 1532US9362493B2Phase-change storage unit for replacing DRAM and FLASH and manufacturing method thereofSHANGHAI INST MICROSYS & INF·Filed 2012·Granted Jun 7, 2016·0 cites·6 claims
- 1631US2015207070A1Antimony-Rich High-speed Phase-change Material Used In Phase-Change Memory, Preparing Method, And Application ThereofSHANGHAI INST MICROSYS & INF·Filed 2012·Application pending·0 cites
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Counts cover granted patents and pending applications in the PatentIndex corpus. How scoring works →