Assignee
SAMSUNG SEMICONDUCTOR CORP
US·2 granted patents·19 citations·filing 1992–1993
Top patents by PatentIndex Score
2 records- 0145US5336625ABiCMOS process with low base recombination current bipolar transistorsSAMSUNG SEMICONDUCTOR CORP·Filed 1993·Granted Aug 9, 1994·14 cites·16 claims
- 0232US5304501ABiCMOS process with low base recombination current bipolar transistorsSAMSUNG SEMICONDUCTOR CORP·Filed 1992·Granted Apr 19, 1994·5 cites·16 claims
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