Assignee
RACHMADY WILLY
US·14 granted patents·10 pending applications·226 citations·filing 2006–2014
Top patents by PatentIndex Score
24 records- 0199US8987794B2Non-planar gate all-around device and method of fabrication thereofRACHMADY WILLY·Filed 2011·Granted Mar 24, 2015·65 cites·29 claims
- 0297US8748940B1Semiconductor devices with germanium-rich active layers and doped transition layersRACHMADY WILLY·Filed 2012·Granted Jun 10, 2014·35 cites·20 claims
- 0396US8575653B2Non-planar quantum well device having interfacial layer and method of forming sameRACHMADY WILLY·Filed 2010·Granted Nov 5, 2013·21 cites·30 claims
- 0495US9590089B2Variable gate width for gate all-around transistorsRACHMADY WILLY·Filed 2011·Granted Mar 7, 2017·18 cites·16 claims
- 0594US8441074B2Substrate fins with different heightsRACHMADY WILLY·Filed 2010·Granted May 14, 2013·21 cites·20 claims
- 0693US8264048B2Multi-gate device having a T-shaped gate structureRACHMADY WILLY·Filed 2008·Granted Sep 11, 2012·29 cites·12 claims
- 0790US8193641B2Recessed workfunction metal in CMOS transistor gatesRACHMADY WILLY·Filed 2006·Granted Jun 5, 2012·21 cites·9 claims
- 0880US8629039B2Substrate fins with different heightsRACHMADY WILLY·Filed 2013·Granted Jan 14, 2014·4 cites·12 claims
- 0979US9159787B2Semiconductor devices with germanium-rich active layers and doped transition layersRACHMADY WILLY·Filed 2014·Granted Oct 13, 2015·2 cites·13 claims
- 1077US8088665B2Method of forming self-aligned low resistance contact layerRACHMADY WILLY·Filed 2008·Granted Jan 3, 2012·5 cites·20 claims
- 1172US8294223B2Metal gate structure and method of manufacturing sameRACHMADY WILLY·Filed 2010·Granted Oct 23, 2012·3 cites·5 claims
- 1263US8686517B2Self-aligned insulating etchstop layer on a metal contactRACHMADY WILLY·Filed 2010·Granted Apr 1, 2014·1 cites·6 claims
- 1362US9608055B2Semiconductor device having germanium active layer with underlying diffusion barrier layerRACHMADY WILLY·Filed 2011·Granted Mar 28, 2017·1 cites·18 claims
- 1459US8106440B2Selective high-k dielectric film deposition for semiconductor deviceRACHMADY WILLY·Filed 2009·Granted Jan 31, 2012·0 cites·8 claims
- 1551US2009321834A1Substrate fins with different heightsRACHMADY WILLY·Filed 2008·Application pending·0 cites
- 1649US2011140229A1Techniques for forming shallow trench isolationRACHMADY WILLY·Filed 2009·Application pending·0 cites
- 1746US2009085169A1Method of achieving atomically smooth sidewalls in deep trenches, and high aspect ratio silicon structure containing atomically smooth sidewallsRACHMADY WILLY·Filed 2007·Application pending·0 cites
- 1845US2009035911A1Method for forming a semiconductor device having abrupt ultra shallow epi-tip regionsRACHMADY WILLY·Filed 2007·Application pending·0 cites
- 1943US2010276763A1Lga substrate and method of making sameRACHMADY WILLY·Filed 2010·Application pending·0 cites
- 2042US2009283922A1Integrating high stress cap layer in high-k metal gate transistorRACHMADY WILLY·Filed 2007·Application pending·0 cites
- 2142US2008315310A1High k dielectric materials integrated into multi-gate transistor structuresRACHMADY WILLY·Filed 2007·Application pending·0 cites
- 2242US2009078982A1Alpha hydroxy carboxylic acid etchants for silicon microstructuresRACHMADY WILLY·Filed 2007·Application pending·0 cites
- 2342US2009061611A1Fabricating dual layer gate electrodes having polysilicon and a workfunction metalRACHMADY WILLY·Filed 2007·Application pending·0 cites
- 2437US2012161105A1Uniaxially strained quantum well device and method of making sameRACHMADY WILLY·Filed 2010·Application pending·0 cites
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