Assignee
PARK JONG MUN
AT·3 granted patents·4 citations·filing 2008–2011
Top patents by PatentIndex Score
3 records- 0168US8963243B2P-channel LDMOS transistor and method of producing a p-channel LDMOS transistorPARK JONG MUN·Filed 2011·Granted Feb 24, 2015·3 cites·7 claims
- 0251US8969961B2Field-effect transistor and method for producing a field-effect transistorPARK JONG MUN·Filed 2008·Granted Mar 3, 2015·1 cites·17 claims
- 0344US9698257B2Symmetric LDMOS transistor including a well of a first type of conductivity and wells of an opposite second type of conductivityPARK JONG MUN·Filed 2011·Granted Jul 4, 2017·0 cites·7 claims
Join the waitlist — get patent alerts
Get an alert when PARK JONG MUN files or is granted a new patent.
We store only your email — no account needed. See our privacy policy.
Counts cover granted patents and pending applications in the PatentIndex corpus. How scoring works →