Assignee
OVONYX INC
US·205 granted patents·8 pending applications·15,122 citations·filing 1999–2014
Top patents by PatentIndex Score
213 records- 0199US7154774B2Detecting switching of access elements of phase change memory cellsOVONYX INC·Filed 2005·Granted Dec 26, 2006·137 cites·13 claims
- 0299US6933516B2Forming tapered lower electrode phase-change memoriesOVONYX INC·Filed 2004·Granted Aug 23, 2005·279 cites·10 claims
- 0399US6800563B2Forming tapered lower electrode phase-change memoriesOVONYX INC·Filed 2001·Granted Oct 5, 2004·226 cites·10 claims
- 0499US6696355B2Method to selectively increase the top resistance of the lower programming electrode in a phase-change memoryOVONYX INC·Filed 2000·Granted Feb 24, 2004·344 cites·19 claims
- 0599US6687153B2Programming a phase-change material memoryOVONYX INC·Filed 2003·Granted Feb 3, 2004·382 cites·22 claims
- 0699US6673700B2Reduced area intersection between electrode and programming elementOVONYX INC·Filed 2001·Granted Jan 6, 2004·648 cites·14 claims
- 0799US6621095B2Method to enhance performance of thermal resistor deviceOVONYX INC·Filed 2001·Granted Sep 16, 2003·480 cites·13 claims
- 0899US6617192B1Electrically programmable memory element with multi-regioned contactOVONYX INC·Filed 2000·Granted Sep 9, 2003·345 cites·11 claims
- 0999US6593176B2Method for forming phase-change memory bipolar array utilizing a single shallow trench isolation for creating an individual active area region for two memory array elements and one bipolar base contactOVONYX INC·Filed 2002·Granted Jul 15, 2003·532 cites·22 claims
- 1099US6570784B2Programming a phase-change material memoryOVONYX INC·Filed 2001·Granted May 27, 2003·402 cites·60 claims
- 1199US6566700B2Carbon-containing interfacial layer for phase-change memoryOVONYX INC·Filed 2001·Granted May 20, 2003·706 cites·18 claims
- 1299US6567293B1Single level metal memory cell using chalcogenide claddingOVONYX INC·Filed 2000·Granted May 20, 2003·645 cites·24 claims
- 1399US6545907B1Technique and apparatus for performing write operations to a phase change material memory deviceOVONYX INC·Filed 2001·Granted Apr 8, 2003·358 cites·40 claims
- 1499US6534781B2Phase-change memory bipolar array utilizing a single shallow trench isolation for creating an individual active area region for two memory array elements and one bipolar base contactOVONYX INC·Filed 2000·Granted Mar 18, 2003·684 cites·8 claims
- 1599US6531373B2Method of forming a phase-change memory cell using silicon on insulator low electrode in charcogenide elementsOVONYX INC·Filed 2000·Granted Mar 11, 2003·364 cites·15 claims
- 1699US6511862B2Modified contact for programmable devicesOVONYX INC·Filed 2001·Granted Jan 28, 2003·384 cites·6 claims
- 1799US6511867B2Utilizing atomic layer deposition for programmable deviceOVONYX INC·Filed 2001·Granted Jan 28, 2003·692 cites·5 claims
- 1899US6487113B1Programming a phase-change memory with slow quench timeOVONYX INC·Filed 2001·Granted Nov 26, 2002·349 cites·17 claims
- 1999US6314014B1Programmable resistance memory arrays with reference cellsOVONYX INC·Filed 1999·Granted Nov 6, 2001·513 cites·99 claims
- 2098US7388775B2Detecting switching of access elements of phase change memory cellsOVONYX INC·Filed 2006·Granted Jun 17, 2008·98 cites·12 claims
- 2198US7023009B2Electrically programmable memory element with improved contactsOVONYX INC·Filed 2004·Granted Apr 4, 2006·259 cites·25 claims
- 2298US6969866B1Electrically programmable memory element with improved contactsOVONYX INC·Filed 1999·Granted Nov 29, 2005·196 cites·33 claims
- 2398US6943365B2Electrically programmable memory element with reduced area of contact and method for making sameOVONYX INC·Filed 2001·Granted Sep 13, 2005·145 cites·3 claims
- 2498US6750079B2Method for making programmable resistance memory elementOVONYX INC·Filed 2001·Granted Jun 15, 2004·202 cites·42 claims
- 2598US6667900B2Method and apparatus to operate a memory cellOVONYX INC·Filed 2001·Granted Dec 23, 2003·277 cites·23 claims
- 2698US6646297B2Lower electrode isolation in a double-wide trenchOVONYX INC·Filed 2000·Granted Nov 11, 2003·192 cites·19 claims
- 2798US6613604B2Method for making small pore for use in programmable resistance memory elementOVONYX INC·Filed 2001·Granted Sep 2, 2003·534 cites·12 claims
- 2898US6589714B2Method for making programmable resistance memory element using silylated photoresistOVONYX INC·Filed 2001·Granted Jul 8, 2003·520 cites·34 claims
- 2998US6563164B2Compositionally modified resistive electrodeOVONYX INC·Filed 2001·Granted May 13, 2003·306 cites·28 claims
- 3098US6480438B1Providing equal cell programming conditions across a large and high density array of phase-change memory cellsOVONYX INC·Filed 2001·Granted Nov 12, 2002·277 cites·15 claims
- 3197US7838341B2Self-aligned memory cells and method for formingOVONYX INC·Filed 2008·Granted Nov 23, 2010·52 cites·36 claims
- 3297US7839674B2Programmable matrix array with chalcogenide materialOVONYX INC·Filed 2008·Granted Nov 23, 2010·51 cites·23 claims
- 3397US7833823B2Programmable resistance memory element and method for making sameOVONYX INC·Filed 2008·Granted Nov 16, 2010·77 cites·24 claims
- 3497US7646630B2Programmable matrix array with chalcogenide materialOVONYX INC·Filed 2005·Granted Jan 12, 2010·63 cites·23 claims
- 3597US6972430B2Sublithographic contact structure, phase change memory cell with optimized heater shape, and manufacturing method thereofOVONYX INC·Filed 2003·Granted Dec 6, 2005·158 cites·16 claims
- 3697US6972428B2Programmable resistance memory elementOVONYX INC·Filed 2004·Granted Dec 6, 2005·133 cites·18 claims
- 3797US6961258B2Pore structure for programmable deviceOVONYX INC·Filed 2004·Granted Nov 1, 2005·96 cites·7 claims
- 3896US7706178B2Programmable matrix array with phase-change materialOVONYX INC·Filed 2008·Granted Apr 27, 2010·53 cites·41 claims
- 3996US7570524B2Circuitry for reading phase change memory cells having a clamping circuitOVONYX INC·Filed 2005·Granted Aug 4, 2009·44 cites·4 claims
- 4096US7499315B2Programmable matrix array with chalcogenide materialOVONYX INC·Filed 2005·Granted Mar 3, 2009·47 cites·108 claims
- 4196US7488968B2Multilevel phase change memoryOVONYX INC·Filed 2005·Granted Feb 10, 2009·40 cites·14 claims
- 4296US7280390B2Reading phase change memories without triggering reset cell threshold devicesOVONYX INC·Filed 2005·Granted Oct 9, 2007·43 cites·30 claims
- 4396US6764894B2Elevated pore phase-change memoryOVONYX INC·Filed 2001·Granted Jul 20, 2004·109 cites·9 claims
- 4495US7466584B1Method and apparatus for driving an electronic loadOVONYX INC·Filed 2008·Granted Dec 16, 2008·47 cites·25 claims
- 4595US7253429B2Electrically programmable memory elementOVONYX INC·Filed 2004·Granted Aug 7, 2007·83 cites·8 claims
- 4695US7122824B2Sublithographic contact structure, in particular for a phase change memory cell, and fabrication process thereofOVONYX INC·Filed 2004·Granted Oct 17, 2006·136 cites·29 claims
- 4795US7050328B2Phase change memory deviceOVONYX INC·Filed 2004·Granted May 23, 2006·91 cites·25 claims
- 4895US6608773B2Programmable resistance memory arrayOVONYX INC·Filed 2001·Granted Aug 19, 2003·82 cites·11 claims
- 4994US7778064B2Accessing a phase change memoryOVONYX INC·Filed 2007·Granted Aug 17, 2010·30 cites·17 claims
- 5094US7391664B2Page mode access for non-volatile memory arraysOVONYX INC·Filed 2006·Granted Jun 24, 2008·29 cites·7 claims
Showing the top 50 of 213 patent records by PatentIndex Score.
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