Assignee
OHTSUKI TSUYOSHI
JP·3 granted patents·1 citations·filing 2012–2013
Top patents by PatentIndex Score
3 records- 0157US8877609B2Method for manufacturing bonded substrate having an insulator layer in part of bonded substrateOHTSUKI TSUYOSHI·Filed 2012·Granted Nov 4, 2014·1 cites·16 claims
- 0240US9696368B2Semiconductor substrate evaluating method, semiconductor substrate for evaluation, and semiconductor deviceOHTSUKI TSUYOSHI·Filed 2013·Granted Jul 4, 2017·0 cites·11 claims
- 0339US8900971B2Bonded substrate and manufacturing method thereofOHTSUKI TSUYOSHI·Filed 2012·Granted Dec 2, 2014·0 cites·15 claims
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