Assignee
OHTAKE HIROTO
JP·1 granted patent·1 pending application·1 citations·filing 2007–2011
Top patents by PatentIndex Score
2 records- 0152US8803285B2Semiconductor device capable of reducing interelectrode leak current and manufacturing method thereofOHTAKE HIROTO·Filed 2007·Granted Aug 12, 2014·1 cites·15 claims
- 0240US2011316161A1Method of producing a dual damascene multilayer interconnection and multilayer interconnection structureOHTAKE HIROTO·Filed 2011·Application pending·0 cites
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