Assignee
OH SECHUNG
KR·10 granted patents·1 pending application·87 citations·filing 2010–2015
Top patents by PatentIndex Score
11 records- 0197US8692342B2Magnetic memory devices having a uniform perpendicular nonmagnetic metal rich anisotropy enhanced patternOH SECHUNG·Filed 2011·Granted Apr 8, 2014·41 cites·6 claims
- 0295US9318695B2Magnetic memory devices having a uniform perpendicular nonmagnetic rich antisotropy enhanced patternOH SECHUNG·Filed 2015·Granted Apr 19, 2016·12 cites·4 claims
- 0391US9048412B2Magnetic memory devices including magnetic layers separated by tunnel barriersOH SECHUNG·Filed 2014·Granted Jun 2, 2015·9 cites·21 claims
- 0490US8445979B2Magnetic memory devices including magnetic layers separated by tunnel barriersOH SECHUNG·Filed 2010·Granted May 21, 2013·9 cites·38 claims
- 0583US8987850B2Magnetic memory devices having a uniform perpendicular nonmagnetic rich antisotropy enhanced patternOH SECHUNG·Filed 2014·Granted Mar 24, 2015·4 cites·9 claims
- 0682US9299923B2Magnetic devices having perpendicular magnetic tunnel junctionOH SECHUNG·Filed 2015·Granted Mar 29, 2016·6 cites·19 claims
- 0781US9166144B2Magnetic devices having perpendicular magnetic tunnel junctionOH SECHUNG·Filed 2014·Granted Oct 20, 2015·3 cites·20 claims
- 0867US8907436B2Magnetic devices having perpendicular magnetic tunnel junctionOH SECHUNG·Filed 2013·Granted Dec 9, 2014·1 cites·34 claims
- 0957US2013234269A1Magnetic memory devices including magnetic layers separated by tunnel barriersOH SECHUNG·Filed 2013·Application pending·0 cites
- 1054US8934288B2Magnetic memory devicesOH SECHUNG·Filed 2012·Granted Jan 13, 2015·2 cites·14 claims
- 1141US9842987B2Magnetic tunnel junction memory devices including crystallized boron-including first magnetic layer on a tunnel barrier layer and lower boron-content second magnetic layer on the first magnetic layerOH SECHUNG·Filed 2014·Granted Dec 12, 2017·0 cites·19 claims
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