Assignee
NOGUCHI HITOSHI
JP·7 granted patents·6 pending applications·11 citations·filing 2008–2012
Top patents by PatentIndex Score
13 records- 0182US8164857B2Magnetic signal reproduction system employing a spin-valve MR head developed for high-density recording and a spin-valve MR head and magnetic signal reproduction method for reproducing magnetic signals in which a spin-valve MR head is employedNOGUCHI HITOSHI·Filed 2008·Granted Apr 24, 2012·4 cites·18 claims
- 0275US9076653B2Substrate for growing single crystal diamond layer and method for producing single crystal diamond substrateNOGUCHI HITOSHI·Filed 2010·Granted Jul 7, 2015·3 cites·17 claims
- 0372US8279554B2Magnetic recording medium and magnetic signal reproduction methodNOGUCHI HITOSHI·Filed 2012·Granted Oct 2, 2012·2 cites·8 claims
- 0466US2012225307A1Multilayer substrate and method for producing the same, diamond film and method for producing the sameNOGUCHI HITOSHI·Filed 2012·Application pending·0 cites
- 0564US9752255B2Base material on which single-crystal diamond is grown comprised of a base substrate, bonded single-crystal MgO layer, and heteroepitaxial film, and method for manufacturing a single-crystal diamond substrate on the base materialNOGUCHI HITOSHI·Filed 2011·Granted Sep 5, 2017·2 cites·23 claims
- 0658US9127375B2Base material for forming single crystal diamond film and method for producing single crystal diamond using the sameNOGUCHI HITOSHI·Filed 2009·Granted Sep 8, 2015·0 cites·6 claims
- 0751US2012225308A1Multilayer substrate and method for producing the same, diamond film and method for producing the sameNOGUCHI HITOSHI·Filed 2012·Application pending·0 cites
- 0848US8826854B2Direct-current plasma CVD apparatus and method for producing diamond using the sameNOGUCHI HITOSHI·Filed 2010·Granted Sep 9, 2014·0 cites·3 claims
- 0944US2013120902A1Substrate-incorporated capacitor, capacitor-incorporating substrate provided with the same, and method for manufacturing substrate-incorporated capacitorNOGUCHI HITOSHI·Filed 2011·Application pending·0 cites
- 1043US2013120904A1Substrate-incorporated capacitor, capacitor-incorporating substrate provided with the same, and method for manufacturing substrate-incorporated capacitorNOGUCHI HITOSHI·Filed 2011·Application pending·0 cites
- 1141US8714332B2Power transmitting deviceNOGUCHI HITOSHI·Filed 2012·Granted May 6, 2014·0 cites·7 claims
- 1241US2012069487A1Stacked structure and method of manufacturing the sameNOGUCHI HITOSHI·Filed 2010·Application pending·0 cites
- 1341US2012085573A1Stacked structure and method of manufacturing the sameNOGUCHI HITOSHI·Filed 2010·Application pending·0 cites
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Counts cover granted patents and pending applications in the PatentIndex corpus. How scoring works →