Assignee
NISHIGUCHI TARO
JP·7 granted patents·11 pending applications·82 citations·filing 2010–2011
Top patents by PatentIndex Score
18 records- 0190US8435866B2Method for manufacturing silicon carbide substrateNISHIGUCHI TARO·Filed 2010·Granted May 7, 2013·11 cites·14 claims
- 0280USD651992SSemiconductor substrateNISHIGUCHI TARO·Filed 2010·Granted Jan 10, 2012·26 cites·1 claims
- 0379USD651991SSemiconductor substrateNISHIGUCHI TARO·Filed 2010·Granted Jan 10, 2012·25 cites·1 claims
- 0474USD655256SSemiconductor substrateNISHIGUCHI TARO·Filed 2010·Granted Mar 6, 2012·20 cites·1 claims
- 0554US9090992B2Method of manufacturing single crystalNISHIGUCHI TARO·Filed 2010·Granted Jul 28, 2015·0 cites·22 claims
- 0646US2012012862A1Method for manufacturing silicon carbide substrate, silicon carbide substrate, and semiconductor deviceNISHIGUCHI TARO·Filed 2010·Application pending·0 cites
- 0746US2012025208A1Method for manufacturing silicon carbide substrate and silicon carbide substrateNISHIGUCHI TARO·Filed 2010·Application pending·0 cites
- 0845US8629457B2Light-emitting deviceNISHIGUCHI TARO·Filed 2011·Granted Jan 14, 2014·0 cites·9 claims
- 0945US2012107218A1Production method of silicon carbide crystal, silicon carbide crystal, and production device of silicon carbide crystalNISHIGUCHI TARO·Filed 2011·Application pending·0 cites
- 1039US9082621B2Method for manufacturing silicon carbide single crystal, and silicon carbide substrateNISHIGUCHI TARO·Filed 2011·Granted Jul 14, 2015·0 cites·11 claims
- 1138US2011278593A1Method for manufacturing silicon carbide substrate, method for manufacturing semiconductor device, silicon carbide substrate, and semiconductor deviceNISHIGUCHI TARO·Filed 2011·Application pending·0 cites
- 1238US2011278594A1Method for manufacturing silicon carbide substrate, method for manufacturing semiconductor device, silicon carbide substrate, and semiconductor deviceNISHIGUCHI TARO·Filed 2011·Application pending·0 cites
- 1338US2012112209A1Silicon carbide substrate fabrication method, semiconductor device fabrication method, silicon carbide substrate, and semiconductor deviceNISHIGUCHI TARO·Filed 2011·Application pending·0 cites
- 1438US2011278595A1Method for manufacturing silicon carbide substrate, method for manufacturing semiconductor device, silicon carbide substrate, and semiconductor deviceNISHIGUCHI TARO·Filed 2011·Application pending·0 cites
- 1537US2012017826A1Method for manufacturing silicon carbide substrateNISHIGUCHI TARO·Filed 2010·Application pending·0 cites
- 1637US2011284873A1Silicon carbide substrateNISHIGUCHI TARO·Filed 2010·Application pending·0 cites
- 1737US2012156122A1Method of producing silicon carbide crystal, and silicon carbide crystalNISHIGUCHI TARO·Filed 2010·Application pending·0 cites
- 1836US2011300354A1Combined substrate and method for manufacturing sameNISHIGUCHI TARO·Filed 2011·Application pending·0 cites
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