Assignee
NAMI MOS CO LTD
TW·17 granted patents·18 pending applications·8 citations·filing 2019–2024
Top patents by PatentIndex Score
35 records- 0196US11462638B2SiC super junction trench MOSFETNAMI MOS CO LTD·Filed 2020·Granted Oct 4, 2022·3 cites·7 claims
- 0288US11380787B2Shielded gate trench MOSFET integrated with super barrier rectifier having short channelNAMI MOS CO LTD·Filed 2020·Granted Jul 5, 2022·2 cites·20 claims
- 0385US11444164B2Shielded gate trench MOSFET having improved specific on-resistance structuresNAMI MOS CO LTD·Filed 2020·Granted Sep 13, 2022·1 cites·8 claims
- 0471US11114558B2Shielded gate trench MOSFET integrated with super barrier rectifierNAMI MOS CO LTD·Filed 2019·Granted Sep 7, 2021·1 cites·8 claims
- 0568US10930774B2Shielded gate trench MOSFETs with floating trenched gates and channel stop trenched gates in terminationNAMI MOS CO LTD·Filed 2019·Granted Feb 23, 2021·1 cites·13 claims
- 0668US2022367710A1Sic super junction trench mosfetNAMI MOS CO LTD·Filed 2022·Application pending·0 cites
- 0767US11600725B2Trench MOSFETs integrated with clamped diodes having trench field plate termination to avoid breakdown voltage degradationNAMI MOS CO LTD·Filed 2022·Granted Mar 7, 2023·0 cites·4 claims
- 0866US11515303B2Shielded gate trench MOSFET with ESD diode manufactured using two poly-silicon layers processNAMI MOS CO LTD·Filed 2021·Granted Nov 29, 2022·0 cites·5 claims
- 0962US2026082681A1Asymmetric Sic Trench Mosfet Cell with an Embedded Super Barrier RectifierNAMI MOS CO LTD·Filed 2024·Application pending·0 cites
- 1060US11329155B2Trench MOSFETs integrated with clamped diodes having trench field plate termination to avoid breakdown voltage degradationNAMI MOS CO LTD·Filed 2020·Granted May 10, 2022·0 cites·4 claims
- 1160US2025287682A1Sic planar mosfets with improved performance structuresNAMI MOS CO LTD·Filed 2024·Application pending·0 cites
- 1259US11018127B2Shielded gate trench MOSFET with ESD diode manufactured using two poly-silicon layers processNAMI MOS CO LTD·Filed 2019·Granted May 25, 2021·0 cites·5 claims
- 1359US2025234601A1Sic mosfets with saturation current pinching structuresNAMI MOS CO LTD·Filed 2024·Application pending·0 cites
- 1458US2024395877A1Shielded gate trench devices having a planarized theramlly grown inter-polysilicon oxide structureNAMI MOS CO LTD·Filed 2023·Application pending·0 cites
- 1557US2025063774A1Sic trench devices having n-type gate oxide shield zonesNAMI MOS CO LTD·Filed 2023·Application pending·0 cites
- 1656US2024186265A1Shielded gate trench mosfets with hexagonal deep trench layouts and multiple epitaxial layersNAMI MOS CO LTD·Filed 2022·Application pending·0 cites
- 1755US12432966B2Shielded gate trench MOSFETs with improved termination structuresNAMI MOS CO LTD·Filed 2022·Granted Sep 30, 2025·0 cites·19 claims
- 1855US2024186385A1Semiconductor Device with Pillar- Shaped Shielded gate structuresNAMI MOS CO LTD·Filed 2023·Application pending·0 cites
- 1955US2024347607A1Shielded gate trench devices having short channelsNAMI MOS CO LTD·Filed 2023·Application pending·0 cites
- 2055US2024363698A1Sic shielded gate trench mosfet with improved performanceNAMI MOS CO LTD·Filed 2023·Application pending·0 cites
- 2154US12328915B2Superfunction MOSFETs having shielded gate trench structuresNAMI MOS CO LTD·Filed 2022·Granted Jun 10, 2025·0 cites·12 claims
- 2253US12268017B2Shielded gate trench MOSFETs with improved trench terminations and shielded gate trench contactsNAMI MOS CO LTD·Filed 2022·Granted Apr 1, 2025·0 cites·20 claims
- 2353US11777000B2SiC trench MOSFET with low on-resistance and switching lossNAMI MOS CO LTD·Filed 2021·Granted Oct 3, 2023·0 cites·11 claims
- 2452US12266726B2Shielded gate trench MOSFETs with improved performance structuresNAMI MOS CO LTD·Filed 2022·Granted Apr 1, 2025·0 cites·20 claims
- 2552US12230705B2Shielded gate trench MOSFETs with improved trench terminations and shielded gate trench contactsNAMI MOS CO LTD·Filed 2022·Granted Feb 18, 2025·0 cites·20 claims
- 2652US12176397B2Super barrier rectifier with shielded gate electrode and multiple stepped epitaxial structureNAMI MOS CO LTD·Filed 2022·Granted Dec 24, 2024·0 cites·8 claims
- 2751US2023010328A1Shielded gate trench mosfet with multiple stepped epitaxial structuresNAMI MOS CO LTD·Filed 2021·Application pending·0 cites
- 2850US2022045184A1Shielded gate trench mosfet with esd diode manufactured using two poly-silicon layers processNAMI MOS CO LTD·Filed 2021·Application pending·0 cites
- 2946US2021320202A1Super Shielded Gate Trench MOSFET Having Superjunction StructureNAMI MOS CO LTD·Filed 2020·Application pending·0 cites
- 3046US2021126124A1Termination of multiple stepped oxide shielded gate trench mosfetNAMI MOS CO LTD·Filed 2019·Application pending·0 cites
- 3146US2021202470A1Mosfet with integrated esd protection diode having anode electrode connection to trenched gates for increasing switch speedNAMI MOS CO LTD·Filed 2019·Application pending·0 cites
- 3246US2021384346A1Shielded gate trench mosfet having super junction surrounding lower portion of trenched gatesNAMI MOS CO LTD·Filed 2020·Application pending·0 cites
- 3345US2021296488A1Shielded gate trench mosfet having super junction region for dc/ac performance improvementNAMI MOS CO LTD·Filed 2020·Application pending·0 cites
- 3444US11004969B2Trench MOSFETs having dummy cells for avalanche capability improvementNAMI MOS CO LTD·Filed 2019·Granted May 11, 2021·0 cites·18 claims
- 3543US2021028305A1Trench mosfets with oxide charge balance region in active area and junction charge balance region in termination areaNAMI MOS CO LTD·Filed 2019·Application pending·0 cites
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