Assignee
MOWRY ANTHONY
US·6 granted patents·31 citations·filing 2009–2012
Top patents by PatentIndex Score
6 records- 0186US8227266B2Test structure for monitoring process characteristics for forming embedded semiconductor alloys in drain/source regionsMOWRY ANTHONY·Filed 2010·Granted Jul 24, 2012·6 cites·7 claims
- 0286US8212184B2Cold temperature control in a semiconductor deviceMOWRY ANTHONY·Filed 2009·Granted Jul 3, 2012·15 cites·25 claims
- 0380US8093634B2In situ formed drain and source regions in a silicon/germanium containing transistor deviceMOWRY ANTHONY·Filed 2009·Granted Jan 10, 2012·9 cites·5 claims
- 0458US8564120B2Heat dissipation in temperature critical device areas of semiconductor devices by heat pipes connecting to the substrate backsideMOWRY ANTHONY·Filed 2009·Granted Oct 22, 2013·1 cites·20 claims
- 0554US8530894B2Test structure for monitoring process characteristics for forming embedded semiconductor alloys in drain/source regionsMOWRY ANTHONY·Filed 2012·Granted Sep 10, 2013·0 cites·7 claims
- 0642US8507351B2Dopant profile tuning for MOS devices by adapting a spacer width prior to implantationMOWRY ANTHONY·Filed 2011·Granted Aug 13, 2013·0 cites·17 claims
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