Assignee
MIZUGUCHI TETSUYA
JP·3 granted patents·12 citations·filing 2009–2012
Top patents by PatentIndex Score
3 records- 0185US8547735B2Memory element and memory deviceMIZUGUCHI TETSUYA·Filed 2009·Granted Oct 1, 2013·10 cites·7 claims
- 0261US8885385B2Memory element and memory deviceMIZUGUCHI TETSUYA·Filed 2012·Granted Nov 11, 2014·2 cites·14 claims
- 0341US9202560B2Memory element and memory device with ion source layer and resistance change layerMIZUGUCHI TETSUYA·Filed 2012·Granted Dec 1, 2015·0 cites·11 claims
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