Assignee

MITSUSHITA ELECTRONICS CORP

US·1 granted patent·54 citations·filing 1999–1999

Technology mixH10P1

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1 record

0180US6218207B1Method for growing nitride semiconductor crystals, nitride semiconductor device, and method for fabricating the sameMITSUSHITA ELECTRONICS CORP·Filed 1999·Granted Apr 17, 2001·54 cites·13 claims

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