Assignee
MATSUBAYASHI DAISUKE
JP·8 granted patents·32 citations·filing 2011–2012
Top patents by PatentIndex Score
8 records- 0189US9425107B2Memory device and method for manufacturing the sameMATSUBAYASHI DAISUKE·Filed 2012·Granted Aug 23, 2016·8 cites·30 claims
- 0285US8760959B2Memory device and electronic deviceMATSUBAYASHI DAISUKE·Filed 2012·Granted Jun 24, 2014·6 cites·7 claims
- 0380US8675394B2Semiconductor memory device with oxide semiconductor transistorMATSUBAYASHI DAISUKE·Filed 2011·Granted Mar 18, 2014·7 cites·17 claims
- 0478US8537600B2Low off-state leakage current semiconductor memory deviceMATSUBAYASHI DAISUKE·Filed 2011·Granted Sep 17, 2013·5 cites·20 claims
- 0568US9263451B2Storage device including memory cell using transistor having oxide semiconductor and amplifier circuitMATSUBAYASHI DAISUKE·Filed 2011·Granted Feb 16, 2016·2 cites·18 claims
- 0661US8958231B2Memory device including first to seventh transistorsMATSUBAYASHI DAISUKE·Filed 2012·Granted Feb 17, 2015·1 cites·6 claims
- 0759US9230648B2Memory deviceMATSUBAYASHI DAISUKE·Filed 2012·Granted Jan 5, 2016·2 cites·9 claims
- 0852US9859268B2Content addressable memoryMATSUBAYASHI DAISUKE·Filed 2012·Granted Jan 2, 2018·1 cites·23 claims
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