Assignee
M MOS SEMICONDUCTOR SDN BHD
MY·2 granted patents·4 pending applications·33 citations·filing 2005–2006
Top patents by PatentIndex Score
6 records- 0188US7687851B2High density trench MOSFET with reduced on-resistanceM MOS SEMICONDUCTOR SDN BHD·Filed 2005·Granted Mar 30, 2010·17 cites·16 claims
- 0287US7592650B2High density hybrid MOSFET deviceM MOS SEMICONDUCTOR SDN BHD·Filed 2005·Granted Sep 22, 2009·16 cites·33 claims
- 0341US2006273385A1Trenched MOSFET device with contact trenches filled with tungsten plugsM MOS SEMICONDUCTOR SDN BHD·Filed 2006·Application pending·0 cites
- 0441US2007004116A1Trenched MOSFET termination with tungsten plug structuresM MOS SEMICONDUCTOR SDN BHD·Filed 2006·Application pending·0 cites
- 0538US2007238251A1Method of forming sub-100nm narrow trenches in semiconductor substratesM MOS SEMICONDUCTOR SDN BHD·Filed 2006·Application pending·0 cites
- 0638US2007176239A1Trenched MOSFETS with improved ESD protection capabilityM MOS SEMICONDUCTOR SDN BHD·Filed 2006·Application pending·0 cites
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