Assignee
LUMIENSE PHOTONICS INC
CA·5 granted patents·22 citations·filing 2008–2019
Top patents by PatentIndex Score
5 records- 0185US7977145B2Method of fabricating silicon/dielectric multi-layer semiconductor structures using layer transfer technology and also a three-dimensional multi-layer semiconductor device and stacked layer type image sensor using the same method, and a method of manufacturing a three-dimensional multi-layer semiconductor device and the stack type image sensorLUMIENSE PHOTONICS INC·Filed 2008·Granted Jul 12, 2011·10 cites·10 claims
- 0281US12021072B2Method of manufacturing of advanced three-dimensional semiconductor structures and structures produced therefromLUMIENSE PHOTONICS INC·Filed 2019·Granted Jun 25, 2024·3 cites·23 claims
- 0380US7977718B2Image sensor photodiodes using a multi-layer substrate and contact method and structure thereofLUMIENSE PHOTONICS INC·Filed 2010·Granted Jul 12, 2011·4 cites·5 claims
- 0471US7943409B2Method of fabricating image sensor photodiodes using a multi-layer substrate and contact method and the structure thereofLUMIENSE PHOTONICS INC·Filed 2010·Granted May 17, 2011·2 cites·2 claims
- 0570US7838318B2Method of fabricating image sensor photodiodes using a multi-layer substrate and contact method and the structure thereofLUMIENSE PHOTONICS INC·Filed 2008·Granted Nov 23, 2010·3 cites·2 claims
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