Assignee
LIN YIZHEN
US·10 granted patents·4 pending applications·180 citations·filing 2008–2013
Top patents by PatentIndex Score
14 records- 0196US8487387B2MEMS sensor device with multi-stimulus sensingLIN YIZHEN·Filed 2012·Granted Jul 16, 2013·35 cites·20 claims
- 0296US8216882B2Method of producing a microelectromechanical (MEMS) sensor deviceLIN YIZHEN·Filed 2010·Granted Jul 10, 2012·33 cites·20 claims
- 0396US8186221B2Vertically integrated MEMS acceleration transducerLIN YIZHEN·Filed 2009·Granted May 29, 2012·57 cites·15 claims
- 0495US8316718B2MEMS pressure sensor device and method of fabricating sameLIN YIZHEN·Filed 2010·Granted Nov 27, 2012·18 cites·20 claims
- 0588US8096182B2Capacitive sensor with stress relief that compensates for package stressLIN YIZHEN·Filed 2008·Granted Jan 17, 2012·16 cites·20 claims
- 0683US8610222B2MEMS device with central anchor for stress isolationLIN YIZHEN·Filed 2011·Granted Dec 17, 2013·6 cites·20 claims
- 0778US9310202B2Angular rate sensor with quadrature error compensationLIN YIZHEN·Filed 2012·Granted Apr 12, 2016·6 cites·8 claims
- 0874US8448513B2Rotary disk gyroscopeLIN YIZHEN·Filed 2011·Granted May 28, 2013·4 cites·20 claims
- 0973US9046546B2Sensor device and related fabrication methodsLIN YIZHEN·Filed 2012·Granted Jun 2, 2015·3 cites·18 claims
- 1064US9003886B2Microelectromechanical systems devices and methods for the fabrication thereofLIN YIZHEN·Filed 2012·Granted Apr 14, 2015·2 cites·17 claims
- 1142US2014074418A1Method and system for calibrating an inertial sensorLIN YIZHEN·Filed 2012·Application pending·0 cites
- 1241US2014225206A1Pressure level adjustment in a cavity of a semiconductor dieLIN YIZHEN·Filed 2013·Application pending·0 cites
- 1341US2013047726A1Angular rate sensor with different gap sizesLIN YIZHEN·Filed 2011·Application pending·0 cites
- 1440US2014144232A1Spring for microelectromechanical systems (mems) deviceLIN YIZHEN·Filed 2012·Application pending·0 cites
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