Assignee
LI JAMES CHINGWEI
US·6 granted patents·38 citations·filing 2008–2014
Top patents by PatentIndex Score
6 records- 0192US8860092B1Metallic sub-collector for HBT and BJT transistorsLI JAMES CHINGWEI·Filed 2008·Granted Oct 14, 2014·20 cites·10 claims
- 0285US8587037B1Test structure to monitor the in-situ channel temperature of field effect transistorsLI JAMES CHINGWEI·Filed 2009·Granted Nov 19, 2013·8 cites·14 claims
- 0378US8178946B1Modulation doped super-lattice base for heterojunction bipolar transistorsLI JAMES CHINGWEI·Filed 2009·Granted May 15, 2012·6 cites·22 claims
- 0469US9099397B1Fabrication of self aligned base contacts for bipolar transistorsLI JAMES CHINGWEI·Filed 2012·Granted Aug 4, 2015·2 cites·14 claims
- 0567US9508552B1Method for forming metallic sub-collector for HBT and BJT transistorsLI JAMES CHINGWEI·Filed 2014·Granted Nov 29, 2016·1 cites·9 claims
- 0661US8957455B1Modulation doped super-lattice base for heterojunction bipolar transistorsLI JAMES CHINGWEI·Filed 2012·Granted Feb 17, 2015·1 cites·19 claims
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