Assignee
LEE YEEHENG
US·8 granted patents·2 pending applications·53 citations·filing 2009–2014
Top patents by PatentIndex Score
10 records- 0192US8252647B2Fabrication of trench DMOS device having thick bottom shielding oxideLEE YEEHENG·Filed 2009·Granted Aug 28, 2012·21 cites·14 claims
- 0288US8803251B2Termination of high voltage (HV) devices with new configurations and methodsLEE YEEHENG·Filed 2011·Granted Aug 12, 2014·10 cites·5 claims
- 0385US8587061B2Power MOSFET device with self-aligned integrated Schottky diodeLEE YEEHENG·Filed 2012·Granted Nov 19, 2013·6 cites·5 claims
- 0484US9000514B2Fabrication of trench DMOS device having thick bottom shielding oxideLEE YEEHENG·Filed 2012·Granted Apr 7, 2015·6 cites·9 claims
- 0581US9136377B2High density MOSFET array with self-aligned contacts delimited by nitride-capped trench gate stacks and methodLEE YEEHENG·Filed 2013·Granted Sep 15, 2015·5 cites·8 claims
- 0676US8252648B2Power MOSFET device with self-aligned integrated Schottky and its manufacturing methodLEE YEEHENG·Filed 2010·Granted Aug 28, 2012·3 cites·11 claims
- 0768US8697520B2Method of forming an asymmetric poly gate for optimum termination design in trench power MOSFETSLEE YEEHENG·Filed 2012·Granted Apr 15, 2014·2 cites·21 claims
- 0852US9627526B2Assymetric poly gate for optimum termination design in trench power MOSFETsLEE YEEHENG·Filed 2014·Granted Apr 18, 2017·0 cites·9 claims
- 0945US2016372542A9Termination of high voltage (hv) devices with new configurations and methodsLEE YEEHENG·Filed 2014·Application pending·0 cites
- 1044US2017125531A9Thicker bottom oxide for reduced miller capacitance in trench metal oxide semiconductor field effect transistor (mosfet)LEE YEEHENG·Filed 2014·Application pending·0 cites
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