Assignee
LEE MING-HSIU
TW·11 granted patents·45 citations·filing 2007–2012
Top patents by PatentIndex Score
11 records- 0189US8077506B2Method for programming a multilevel phase change memory deviceLEE MING-HSIU·Filed 2010·Granted Dec 13, 2011·9 cites·5 claims
- 0278US8241928B2Test structure and method for detecting charge effects during semiconductor processingLEE MING-HSIU·Filed 2010·Granted Aug 14, 2012·4 cites·19 claims
- 0376US8198619B2Phase change memory cell structureLEE MING-HSIU·Filed 2009·Granted Jun 12, 2012·8 cites·15 claims
- 0474US8094488B2Set algorithm for phase change memory cellLEE MING-HSIU·Filed 2010·Granted Jan 10, 2012·4 cites·20 claims
- 0573US8809829B2Phase change memory having stabilized microstructure and manufacturing methodLEE MING-HSIU·Filed 2009·Granted Aug 19, 2014·8 cites·8 claims
- 0669US8779408B2Phase change memory cell structureLEE MING-HSIU·Filed 2012·Granted Jul 15, 2014·3 cites·14 claims
- 0768US8084761B2Structure for phase change memory and the method of forming sameLEE MING HSIU·Filed 2007·Granted Dec 27, 2011·3 cites·13 claims
- 0865US8064247B2Rewritable memory device based on segregation/re-absorptionLEE MING-HSIU·Filed 2009·Granted Nov 22, 2011·5 cites·26 claims
- 0953US8537609B2Memory device and method of operating the sameLEE MING-HSIU·Filed 2011·Granted Sep 17, 2013·1 cites·17 claims
- 1052US8674459B2Three-dimensional memory devices and methods of manufacturing and operating the sameLEE MING-HSIU·Filed 2011·Granted Mar 18, 2014·0 cites·10 claims
- 1141US8937291B2Three-dimensional array structure for memory devicesLEE MING-HSIU·Filed 2012·Granted Jan 20, 2015·0 cites·19 claims
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