Assignee
LEE JOONMYOUNG
KR·6 granted patents·23 citations·filing 2014–2018
Top patents by PatentIndex Score
6 records- 0189US10147873B2Free layer, magnetoresistive cell, and magnetoresistive random access memory device having low boron concentration region and high boron concentration region, and methods of fabricating the sameLEE JOONMYOUNG·Filed 2018·Granted Dec 4, 2018·6 cites·20 claims
- 0284US9640755B2Magnetic memory device and method of manufacturing the sameLEE JOONMYOUNG·Filed 2015·Granted May 2, 2017·4 cites·20 claims
- 0383US9985200B2Magnetic memory devices including oxidized non-magnetic patterns with non-metallic elements and methods of fabricating the sameLEE JOONMYOUNG·Filed 2017·Granted May 29, 2018·4 cites·29 claims
- 0483US9905753B2Free layer, magnetoresistive cell, and magnetoresistive random access memory device having low boron concentration region and high boron concentration region, and methods of fabricating the sameLEE JOONMYOUNG·Filed 2016·Granted Feb 27, 2018·6 cites·20 claims
- 0579US9934950B2Sputtering apparatuses and methods of manufacturing a magnetic memory device using the sameLEE JOONMYOUNG·Filed 2016·Granted Apr 3, 2018·1 cites·15 claims
- 0671US9203014B2Magnetic memory devices having junction magnetic layers and buffer layers and related methodsLEE JOONMYOUNG·Filed 2014·Granted Dec 1, 2015·2 cites·30 claims
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