Assignee
KITOU YASUO
JP·2 granted patents·8 citations·filing 2008–2010
Top patents by PatentIndex Score
2 records- 0178US8591654B2Device for manufacturing sic single crystal and method for the sameKITOU YASUO·Filed 2008·Granted Nov 26, 2013·4 cites·10 claims
- 0274US8470091B2SiC single crystal substrate, SiC single crystal epitaxial wafer, and SiC semiconductor deviceKITOU YASUO·Filed 2010·Granted Jun 25, 2013·4 cites·10 claims
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