Assignee
KAKEHATA TETSUYA
JP·10 granted patents·23 citations·filing 2007–2012
Top patents by PatentIndex Score
10 records- 0185US9231070B2Nonvolatile semiconductor memory device and manufacturing method thereof, semiconductor device and manufacturing method thereof, and manufacturing method of insulating filmKAKEHATA TETSUYA·Filed 2011·Granted Jan 5, 2016·6 cites·20 claims
- 0282US8207045B2Method for manufacturing SOI substrateKAKEHATA TETSUYA·Filed 2010·Granted Jun 26, 2012·5 cites·14 claims
- 0372US8912624B2Semiconductor substrate and method for manufacturing the sameKAKEHATA TETSUYA·Filed 2010·Granted Dec 16, 2014·3 cites·14 claims
- 0469US8114722B2Manufacturing method of semiconductor deviceKAKEHATA TETSUYA·Filed 2008·Granted Feb 14, 2012·4 cites·17 claims
- 0568US8390067B2Substrate for manufacturing semiconductor device and manufacturing method thereofKAKEHATA TETSUYA·Filed 2011·Granted Mar 5, 2013·2 cites·21 claims
- 0664US8633542B2SOI substrate and manufacturing method thereofKAKEHATA TETSUYA·Filed 2011·Granted Jan 21, 2014·1 cites·28 claims
- 0762US8895388B2Method of manufacturing a semiconductor device and a non-volatile semiconductor storage device including the formation of an insulating layer using a plasma treatmentKAKEHATA TETSUYA·Filed 2007·Granted Nov 25, 2014·1 cites·30 claims
- 0862US8273611B2Method for manufacturing semiconductor substrateKAKEHATA TETSUYA·Filed 2010·Granted Sep 25, 2012·1 cites·7 claims
- 0952US9837300B2Method for manufacturing SOI substrateKAKEHATA TETSUYA·Filed 2012·Granted Dec 5, 2017·0 cites·12 claims
- 1050US8227866B2Semiconductor substrate and semiconductor device and manufacturing method of the sameKAKEHATA TETSUYA·Filed 2011·Granted Jul 24, 2012·0 cites·12 claims
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