Assignee
IKUTA TETSUYA
JP·10 granted patents·1 pending application·46 citations·filing 2009–2012
Top patents by PatentIndex Score
11 records- 0192US9006865B2Epitaxial growth substrate, semiconductor device, and epitaxial growth methodIKUTA TETSUYA·Filed 2011·Granted Apr 14, 2015·15 cites·9 claims
- 0288US8426893B2Epitaxial substrate for electronic device and method of producing the sameIKUTA TETSUYA·Filed 2010·Granted Apr 23, 2013·10 cites·14 claims
- 0383US8847203B2Group III nitride epitaxial laminate substrateIKUTA TETSUYA·Filed 2010·Granted Sep 30, 2014·7 cites·7 claims
- 0479US10727303B2Group III nitride epitaxial substrate and method for manufacturing the sameIKUTA TETSUYA·Filed 2012·Granted Jul 28, 2020·4 cites·7 claims
- 0577US8410472B2Epitaxial substrate for electronic device and method of producing the sameIKUTA TETSUYA·Filed 2009·Granted Apr 2, 2013·6 cites·6 claims
- 0677US8124440B2Solid-state imaging device and method for making the same, and manufacturing substrate for solid-state imaging deviceIKUTA TETSUYA·Filed 2009·Granted Feb 28, 2012·3 cites·22 claims
- 0766US8633556B2Solid-state imaging device and method for making the same, and manufacturing substrate for solid-state imaging deviceIKUTA TETSUYA·Filed 2012·Granted Jan 21, 2014·0 cites·12 claims
- 0863US10388517B2Epitaxial substrate for electronic device and method of producing the sameIKUTA TETSUYA·Filed 2012·Granted Aug 20, 2019·1 cites·3 claims
- 0954US2011298009A1Epitaxial substrate for electronic device and method of producing the sameIKUTA TETSUYA·Filed 2009·Application pending·0 cites
- 1040US8710489B2Epitaxial substrate for electronic device, in which current flows in lateral direction and method of producing the sameIKUTA TETSUYA·Filed 2010·Granted Apr 29, 2014·0 cites·9 claims
- 1139US8946863B2Epitaxial substrate for electronic device comprising a high resistance single crystal substrate on a low resistance single crystal substrate, and method of manufacturingIKUTA TETSUYA·Filed 2010·Granted Feb 3, 2015·0 cites·6 claims
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