Assignee
ICEMOS TECHNOLOGY LTD
GB·26 granted patents·3 pending applications·143 citations·filing 2006–2014
Top patents by PatentIndex Score
29 records- 0194US7576404B2Backlit photodiode and method of manufacturing a backlit photodiodeICEMOS TECHNOLOGY LTD·Filed 2006·Granted Aug 18, 2009·28 cites·4 claims
- 0290US7560791B2Front lit PIN/NIP diode having a continuous anode/cathodeICEMOS TECHNOLOGY LTD·Filed 2006·Granted Jul 14, 2009·13 cites·7 claims
- 0389US7972934B2Photodetector array using isolation diffusions as crosstalk inhibitors between adjacent photodiodesICEMOS TECHNOLOGY LTD·Filed 2008·Granted Jul 5, 2011·10 cites·14 claims
- 0488US7601556B2Front side electrical contact for photodetector array and method of making sameICEMOS TECHNOLOGY LTD·Filed 2008·Granted Oct 13, 2009·10 cites·8 claims
- 0587US7553764B2Silicon wafer having through-wafer viasICEMOS TECHNOLOGY LTD·Filed 2006·Granted Jun 30, 2009·14 cites·11 claims
- 0686US8946814B2Superjunction devices having narrow surface layout of terminal structures, buried contact regions and trench gatesICEMOS TECHNOLOGY LTD·Filed 2013·Granted Feb 3, 2015·8 cites·10 claims
- 0786US7723172B2Methods for manufacturing a trench type semiconductor device having a thermally sensitive refill materialICEMOS TECHNOLOGY LTD·Filed 2008·Granted May 25, 2010·13 cites·20 claims
- 0885US7528458B2Photodiode having increased proportion of light-sensitive area to light-insensitive areaICEMOS TECHNOLOGY LTD·Filed 2007·Granted May 5, 2009·7 cites·13 claims
- 0982US7741141B2Photodiode having increased proportion of light-sensitive area to light-insensitive areaICEMOS TECHNOLOGY LTD·Filed 2009·Granted Jun 22, 2010·5 cites·7 claims
- 1080US7768085B2Photodetector array using isolation diffusions as crosstalk inhibitors between adjacent photodiodesICEMOS TECHNOLOGY LTD·Filed 2006·Granted Aug 3, 2010·4 cites·7 claims
- 1179US7944018B2Semiconductor devices with sealed, unlined trenches and methods of forming sameICEMOS TECHNOLOGY LTD·Filed 2007·Granted May 17, 2011·5 cites·1 claims
- 1278US7579667B2Bonded-wafer superjunction semiconductor deviceICEMOS TECHNOLOGY LTD·Filed 2008·Granted Aug 25, 2009·7 cites·6 claims
- 1377US8963239B2800 V superjunction deviceICEMOS TECHNOLOGY LTD·Filed 2014·Granted Feb 24, 2015·4 cites·18 claims
- 1468US7846821B2Multi-angle rotation for ion implantation of trenches in superjunction devicesICEMOS TECHNOLOGY LTD·Filed 2009·Granted Dec 7, 2010·2 cites·7 claims
- 1568US7489014B2Front side electrical contact for photodetector array and method of making sameICEMOS TECHNOLOGY LTD·Filed 2007·Granted Feb 10, 2009·1 cites·12 claims
- 1667US7579273B2Method of manufacturing a photodiode array with through-wafer viasICEMOS TECHNOLOGY LTD·Filed 2007·Granted Aug 25, 2009·3 cites·21 claims
- 1766US9349725B2Stripe orientation for trenches and contact windowsICEMOS TECHNOLOGY LTD·Filed 2014·Granted May 24, 2016·2 cites·19 claims
- 1866US7795045B2Trench depth monitor for semiconductor manufacturingICEMOS TECHNOLOGY LTD·Filed 2009·Granted Sep 14, 2010·2 cites·22 claims
- 1964US9147751B2Methods of manufacturing superjunction devicesICEMOS TECHNOLOGY LTD·Filed 2014·Granted Sep 29, 2015·1 cites·3 claims
- 2063US8030133B2Method of fabricating a bonded wafer substrate for use in MEMS structuresICEMOS TECHNOLOGY LTD·Filed 2009·Granted Oct 4, 2011·2 cites·10 claims
- 2161US7821089B2Photodetector array using isolation diffusions as crosstalk inhibitors between adjacent photodiodesICEMOS TECHNOLOGY LTD·Filed 2008·Granted Oct 26, 2010·0 cites·16 claims
- 2258US7999348B2Technique for stable processing of thin/fragile substratesICEMOS TECHNOLOGY LTD·Filed 2008·Granted Aug 16, 2011·0 cites·10 claims
- 2357US2015050817A1Method of preventing voltage breakdown at a surface of a semiconductor substrate of a superjunction semiconductor deviceICEMOS TECHNOLOGY LTD·Filed 2014·Application pending·0 cites
- 2454US7910479B2Method of manufacturing a photodiode array with through-wafer viasICEMOS TECHNOLOGY LTD·Filed 2009·Granted Mar 22, 2011·0 cites·19 claims
- 2552US2009253261A1Silicon Wafer Having Through-Wafer Vias With A Predetermined Geometric ShapeICEMOS TECHNOLOGY LTD·Filed 2009·Application pending·0 cites
- 2651US8012806B2Multi-directional trenching of a die in manufacturing superjunction devicesICEMOS TECHNOLOGY LTD·Filed 2008·Granted Sep 6, 2011·0 cites·15 claims
- 2748US7741172B2Positive-intrinsic-negative (PIN)/negative-intrinsic-positive (NIP) diodeICEMOS TECHNOLOGY LTD·Filed 2006·Granted Jun 22, 2010·2 cites·17 claims
- 2847US7709950B2Silicon wafer having through-wafer viasICEMOS TECHNOLOGY LTD·Filed 2008·Granted May 4, 2010·0 cites·6 claims
- 2937US2011042576A1Direct wafer-bonded through-hole photodiodeICEMOS TECHNOLOGY LTD·Filed 2010·Application pending·0 cites
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