Assignee
HU YONGJUN JEFF
US·11 granted patents·1 pending application·16 citations·filing 2006–2012
Top patents by PatentIndex Score
12 records- 0182US8564094B2Capacitors including at least two portions of a metal nitride material, methods of forming such structures, and semiconductor devices including such structuresHU YONGJUN JEFF·Filed 2009·Granted Oct 22, 2013·9 cites·25 claims
- 0274US8659064B2Semiconductor barrier layer constructions, and methods of forming semiconductor barrier layer constructionsHU YONGJUN JEFF·Filed 2011·Granted Feb 25, 2014·2 cites·18 claims
- 0370US8227875B2Semiconductor structures resulting from selective oxidationHU YONGJUN JEFF·Filed 2010·Granted Jul 24, 2012·2 cites·18 claims
- 0466US8797662B2Apparatuses and devices for absorbing electromagnetic radiation, and methods of forming the apparatuses and devicesHU YONGJUN JEFF·Filed 2010·Granted Aug 5, 2014·1 cites·35 claims
- 0563US8652912B2Methods of fabricating a transistor gate including cobalt silicideHU YONGJUN JEFF·Filed 2006·Granted Feb 18, 2014·2 cites·62 claims
- 0656US8716119B2Methods of forming transistor gatesHU YONGJUN JEFF·Filed 2012·Granted May 6, 2014·0 cites·8 claims
- 0754US2011291147A1Ohmic contacts for semiconductor structuresHU YONGJUN JEFF·Filed 2010·Application pending·0 cites
- 0853US8288817B2Semiconductor constructions for transistor gates and NAND cell unitsHU YONGJUN JEFF·Filed 2011·Granted Oct 16, 2012·0 cites·20 claims
- 0951US9006060B2N-type field effect transistors, arrays comprising N-type vertically-oriented transistors, methods of forming an N-type field effect transistor, and methods of forming an array comprising vertically-oriented N-type transistorsHU YONGJUN JEFF·Filed 2012·Granted Apr 14, 2015·0 cites·32 claims
- 1051US8435889B2Methods of forming CoSi2, methods of forming field effect transistors, and methods of forming conductive contactsHU YONGJUN JEFF·Filed 2011·Granted May 7, 2013·0 cites·32 claims
- 1149US9129896B2Arrays comprising vertically-oriented transistors, integrated circuitry comprising a conductive line buried in silicon-comprising semiconductor material, methods of forming a plurality of conductive lines buried in silicon-comprising semiconductor material, and methods of forming an array comprising vertically-oriented transistorsHU YONGJUN JEFF·Filed 2012·Granted Sep 8, 2015·0 cites·30 claims
- 1248US9249498B2Forming memory using high power impulse magnetron sputteringHU YONGJUN JEFF·Filed 2010·Granted Feb 2, 2016·0 cites·12 claims
Join the waitlist — get patent alerts
Get an alert when HU YONGJUN JEFF files or is granted a new patent.
We store only your email — no account needed. See our privacy policy.
Counts cover granted patents and pending applications in the PatentIndex corpus. How scoring works →