Assignee
HSIEH FU-YUAN
TW·46 granted patents·11 pending applications·355 citations·filing 2007–2021
Top patents by PatentIndex Score
57 records- 0198US8067800B2Super-junction trench MOSFET with resurf step oxide and the method to make the sameHSIEH FU-YUAN·Filed 2009·Granted Nov 29, 2011·69 cites·18 claims
- 0296US8274113B1Trench MOSFET having shielded electrode integrated with trench Schottky rectifierHSIEH FU-YUAN·Filed 2011·Granted Sep 25, 2012·26 cites·20 claims
- 0395US8564058B1Super-junction trench MOSFET with multiple trenched gates in unit cellHSIEH FU-YUAN·Filed 2012·Granted Oct 22, 2013·18 cites·11 claims
- 0494US8653589B2Low Qgd trench MOSFET integrated with schottky rectifierHSIEH FU-YUAN·Filed 2011·Granted Feb 18, 2014·18 cites·9 claims
- 0593US8680610B2Trench MOSFET having floating dummy cells for avalanche improvementHSIEH FU-YUAN·Filed 2011·Granted Mar 25, 2014·17 cites·20 claims
- 0692US8101993B2MSD integrated circuits with shallow trenchHSIEH FU-YUAN·Filed 2009·Granted Jan 24, 2012·23 cites·30 claims
- 0791US8723317B2Trench metal oxide semiconductor field effect transistor with embedded schottky rectifier using reduced masks processHSIEH FU-YUAN·Filed 2012·Granted May 13, 2014·9 cites·11 claims
- 0891US8587054B2Trench MOSFET with resurf stepped oxide and diffused drift regionHSIEH FU-YUAN·Filed 2011·Granted Nov 19, 2013·12 cites·15 claims
- 0990US8653587B2Trench MOSFET having a top side drainHSIEH FU-YUAN·Filed 2012·Granted Feb 18, 2014·10 cites·14 claims
- 1090US8120106B2LDMOS with double LDD and trenched drainHSIEH FU-YUAN·Filed 2011·Granted Feb 21, 2012·8 cites·5 claims
- 1189US8058685B2Trench MOSFET structures using three masks processHSIEH FU-YUAN·Filed 2009·Granted Nov 15, 2011·12 cites·19 claims
- 1287US8569780B2Semiconductor power device with embedded diodes and resistors using reduced mask processesHSIEH FU-YUAN·Filed 2011·Granted Oct 29, 2013·9 cites·5 claims
- 1387US8564047B2Semiconductor power devices integrated with a trenched clamp diodeHSIEH FU-YUAN·Filed 2011·Granted Oct 22, 2013·9 cites·14 claims
- 1487US8314000B2LDMOS with double LDD and trenched drainHSIEH FU-YUAN·Filed 2011·Granted Nov 20, 2012·6 cites·17 claims
- 1586US8178922B2Trench MOSFET with ultra high cell density and manufacture thereofHSIEH FU-YUAN·Filed 2010·Granted May 15, 2012·8 cites·15 claims
- 1684US8564054B2Trench semiconductor power device having active cells under gate metal padHSIEH FU-YUAN·Filed 2011·Granted Oct 22, 2013·7 cites·24 claims
- 1782US8652900B2Trench MOSFET with ultra high cell density and manufacture thereofHSIEH FU-YUAN·Filed 2012·Granted Feb 18, 2014·5 cites·8 claims
- 1882US8519477B2Trench MOSFET with trenched floating gates and trenched channel stop gates in terminationHSIEH FU-YUAN·Filed 2012·Granted Aug 27, 2013·6 cites·17 claims
- 1982US8466514B2Semiconductor power device integrated with improved gate source ESD clamp diodesHSIEH FU-YUAN·Filed 2011·Granted Jun 18, 2013·6 cites·12 claims
- 2081US8164162B2Power semiconductor devices integrated with clamp diodes sharing same gate metal padHSIEH FU-YUAN·Filed 2009·Granted Apr 24, 2012·9 cites·5 claims
- 2179US8253164B2Fast switching lateral insulated gate bipolar transistor (LIGBT) with trenched contactsHSIEH FU-YUAN·Filed 2010·Granted Aug 28, 2012·4 cites·17 claims
- 2278US8148773B2Power semiconductor devices integrated with clamp diodes having separated gate metal pads to avoid breakdown voltage degradationHSIEH FU-YUAN·Filed 2011·Granted Apr 3, 2012·4 cites·7 claims
- 2376US8907415B2High switching trench MOSFETHSIEH FU-YUAN·Filed 2011·Granted Dec 9, 2014·4 cites·21 claims
- 2476US8569765B2MOSFET-Schottky rectifier-diode integrated circuits with trench contact structuresHSIEH FU-YUAN·Filed 2011·Granted Oct 29, 2013·4 cites·30 claims
- 2576US8564053B2Trench MOSFET with trenched floating gates in terminationHSIEH FU-YUAN·Filed 2012·Granted Oct 22, 2013·4 cites·16 claims
- 2676US8222108B2Method of making a trench MOSFET having improved avalanche capability using three masks processHSIEH FU-YUAN·Filed 2009·Granted Jul 17, 2012·6 cites·8 claims
- 2775US8816348B2Shielded gate MOSFET-Schottky rectifier-diode integrated circuits with trenched contact structuresHSIEH FU-YUAN·Filed 2011·Granted Aug 26, 2014·4 cites·39 claims
- 2875US8264035B2Avalanche capability improvement in power semiconductor devicesHSIEH FU-YUAN·Filed 2010·Granted Sep 11, 2012·3 cites·13 claims
- 2975US8072000B2Avalanche capability improvement in power semiconductor devices having dummy cells around edge of active areaHSIEH FU-YUAN·Filed 2009·Granted Dec 6, 2011·6 cites·5 claims
- 3074US8614482B2Semiconductor power device having improved termination structure for mask savingHSIEH FU-YUAN·Filed 2011·Granted Dec 24, 2013·3 cites·20 claims
- 3173US8525255B2Trench MOSFET with trenched floating gates having thick trench bottom oxide as terminationHSIEH FU-YUAN·Filed 2011·Granted Sep 3, 2013·3 cites·19 claims
- 3272US8105903B2Method for making a trench MOSFET with shallow trench structuresHSIEH FU-YUAN·Filed 2009·Granted Jan 31, 2012·4 cites·13 claims
- 3371US8643092B2Shielded trench MOSFET with multiple trenched floating gates as terminationHSIEH FU-YUAN·Filed 2011·Granted Feb 4, 2014·3 cites·22 claims
- 3471US8564052B2Trench MOSFET with trenched floating gates in terminationHSIEH FU-YUAN·Filed 2011·Granted Oct 22, 2013·3 cites·5 claims
- 3571US8563381B2Method for manufacturing a power semiconductor deviceHSIEH FU-YUAN·Filed 2012·Granted Oct 22, 2013·2 cites·4 claims
- 3670US8269273B2Trench MOSFET with etching buffer layer in trench gateHSIEH FU-YUAN·Filed 2008·Granted Sep 18, 2012·4 cites·14 claims
- 3770US8217422B1Semiconductor devices with gate-source ESD diode and gate-drain clamp diodeHSIEH FU-YUAN·Filed 2012·Granted Jul 10, 2012·2 cites·6 claims
- 3869US8164114B2Semiconductor devices with gate-source ESD diode and gate-drain clamp diodeHSIEH FU-YUAN·Filed 2011·Granted Apr 24, 2012·2 cites·12 claims
- 3967US8426913B2Integrated trench MOSFET with trench Schottky rectifierHSIEH FU-YUAN·Filed 2010·Granted Apr 23, 2013·2 cites·21 claims
- 4059US8164139B2MOSFET structure with guard ringHSIEH FU-YUAN·Filed 2010·Granted Apr 24, 2012·1 cites·10 claims
- 4152US8598624B2Fast switching hybrid IGBT device with trenched contactsHSIEH FU-YUAN·Filed 2012·Granted Dec 3, 2013·0 cites·8 claims
- 4252US8530313B2Method of manufacturing trench MOSFET structures using three masks processHSIEH FU-YUAN·Filed 2011·Granted Sep 10, 2013·0 cites·4 claims
- 4351US8889513B2Trench MOSFET with trenched floating gates having thick trench bottom oxide as terminationHSIEH FU-YUAN·Filed 2013·Granted Nov 18, 2014·0 cites·6 claims
- 4450US2022293786A1An improved shielded gate trench mosfet with low on-resistanceHSIEH FU YUAN·Filed 2021·Application pending·0 cites
- 4550US2013001684A1Method of manufacturing trench mosfet using three masks process having tilt- angle source implantsHSIEH FU-YUAN·Filed 2012·Application pending·0 cites
- 4644US2009267143A1Trenched mosfet with guard ring and channel stopHSIEH FU-YUAN·Filed 2008·Application pending·0 cites
- 4744US2009267140A1Mosfet structure with guard ringHSIEH FU-YUAN·Filed 2008·Application pending·0 cites
- 4843US7872306B2Structure of trench MOSFET and method for manufacturing the sameHSIEH FU-YUAN·Filed 2007·Granted Jan 18, 2011·0 cites·18 claims
- 4941US2013256786A1Trench mosfet with shielded electrode and avalanche enhancement regionHSIEH FU-YUAN·Filed 2012·Application pending·0 cites
- 5040US8658492B2Semiconductor power device integrated with ESD protection diodesHSIEH FU-YUAN·Filed 2012·Granted Feb 25, 2014·0 cites·12 claims
Showing the top 50 of 57 patent records by PatentIndex Score.
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