Assignee
HAN JINMAN
KR·11 granted patents·931 citations·filing 2010–2016
Top patents by PatentIndex Score
11 records- 0198US8553466B2Non-volatile memory device, erasing method thereof, and memory system including the sameHAN JINMAN·Filed 2011·Granted Oct 8, 2013·815 cites·37 claims
- 0297US8559224B2Nonvolatile memory device, operating method thereof, and memory system including the sameHAN JINMAN·Filed 2011·Granted Oct 15, 2013·36 cites·39 claims
- 0392US8917558B2Nonvolatile memory devices, operating methods thereof and memory systems including the sameHAN JINMAN·Filed 2011·Granted Dec 23, 2014·12 cites·19 claims
- 0492US8427871B2Nonvolatile memory device, memory system incorporating same, and method of operating sameHAN JINMAN·Filed 2010·Granted Apr 23, 2013·17 cites·20 claims
- 0591US9378831B2Nonvolatile memory devices, operating methods thereof and memory systems including the sameHAN JINMAN·Filed 2015·Granted Jun 28, 2016·13 cites·20 claims
- 0691US8923053B2Nonvolatile memory device, operating method thereof, and memory system including the sameHAN JINMAN·Filed 2013·Granted Dec 30, 2014·12 cites·21 claims
- 0790US8976584B2Flash memory device and method of programming the sameHAN JINMAN·Filed 2013·Granted Mar 10, 2015·14 cites·20 claims
- 0884US8848456B2Nonvolatile memory device, erasing method thereof, and memory system including the sameHAN JINMAN·Filed 2013·Granted Sep 30, 2014·7 cites·20 claims
- 0974US9330769B2Nonvolatile memory devices, operating methods thereof and memory systems including the sameHAN JINMAN·Filed 2014·Granted May 3, 2016·3 cites·12 claims
- 1063US10217516B2Nonvolatile memory devices, operating methods thereof and memory systems including the sameHAN JINMAN·Filed 2016·Granted Feb 26, 2019·1 cites·10 claims
- 1154US8588002B2Nonvolatile memory devices and programming methods thereof in which a program inhibit voltage is changed during programmingHAN JINMAN·Filed 2010·Granted Nov 19, 2013·1 cites·25 claims
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