Assignee
GUO DECHAO
US·36 granted patents·10 pending applications·567 citations·filing 2009–2012
Top patents by PatentIndex Score
46 records- 0198US8900935B2Deposition on a nanowire using atomic layer depositionGUO DECHAO·Filed 2011·Granted Dec 2, 2014·347 cites·20 claims
- 0296US8084346B1Replacement metal gate methodGUO DECHAO·Filed 2010·Granted Dec 27, 2011·26 cites·20 claims
- 0394US9142660B2Method to fabricate a vertical transistor having an asymmetric gate with two conductive layers having different work functionsGUO DECHAO·Filed 2012·Granted Sep 22, 2015·17 cites·19 claims
- 0493US8610172B2FETs with hybrid channel materialsGUO DECHAO·Filed 2011·Granted Dec 17, 2013·17 cites·21 claims
- 0593US8513081B2Carbon implant for workfunction adjustment in replacement gate transistorGUO DECHAO·Filed 2011·Granted Aug 20, 2013·12 cites·19 claims
- 0692US9068936B2Graphene sensorGUO DECHAO·Filed 2012·Granted Jun 30, 2015·11 cites·10 claims
- 0792US8866214B2Vertical transistor having an asymmetric gateGUO DECHAO·Filed 2011·Granted Oct 21, 2014·13 cites·11 claims
- 0890US8569135B2Replacement gate electrode with planar work function material layersGUO DECHAO·Filed 2011·Granted Oct 29, 2013·10 cites·12 claims
- 0990US8455365B2Self-aligned carbon electronics with embedded gate electrodeGUO DECHAO·Filed 2011·Granted Jun 4, 2013·9 cites·18 claims
- 1089US8686514B2Multiple threshold voltages in field effect transistor devicesGUO DECHAO·Filed 2012·Granted Apr 1, 2014·9 cites·14 claims
- 1187US8927432B2Continuously scalable width and height semiconductor finsGUO DECHAO·Filed 2012·Granted Jan 6, 2015·8 cites·9 claims
- 1287US8519454B2Structure and process for metal fill in replacement metal gate integrationGUO DECHAO·Filed 2011·Granted Aug 27, 2013·9 cites·22 claims
- 1387US8268689B2Multiple threshold voltages in field effect transistor devicesGUO DECHAO·Filed 2010·Granted Sep 18, 2012·8 cites·16 claims
- 1486US8802482B2Method to fabricate multicrystal solar cell with light trapping surface using nanopore copolymerGUO DECHAO·Filed 2011·Granted Aug 12, 2014·4 cites·20 claims
- 1584US8895372B2Graphene based three-dimensional integrated circuit deviceGUO DECHAO·Filed 2012·Granted Nov 25, 2014·14 cites·4 claims
- 1683US8859316B2Schottky junction si nanowire field-effect bio-sensor/molecule detectorGUO DECHAO·Filed 2010·Granted Oct 14, 2014·9 cites·15 claims
- 1782US8435878B2Field effect transistor device and fabricationGUO DECHAO·Filed 2010·Granted May 7, 2013·5 cites·7 claims
- 1882US8288217B2Stressor in planar field effect transistor deviceGUO DECHAO·Filed 2010·Granted Oct 16, 2012·6 cites·18 claims
- 1982US8283217B2Prevention of oxygen absorption into high-K gate dielectric of silicon-on-insulator based finFET devicesGUO DECHAO·Filed 2010·Granted Oct 9, 2012·6 cites·15 claims
- 2081US8680646B2Self-aligned carbon electronics with embedded gate electrodeGUO DECHAO·Filed 2012·Granted Mar 25, 2014·4 cites·4 claims
- 2176US8445371B2Self-aligned contactsGUO DECHAO·Filed 2010·Granted May 21, 2013·3 cites·14 claims
- 2275US9437677B2Deposition on a nanowire using atomic layer depositionGUO DECHAO·Filed 2012·Granted Sep 6, 2016·2 cites·10 claims
- 2370US8338258B2Embedded stressor for semiconductor structuresGUO DECHAO·Filed 2009·Granted Dec 25, 2012·3 cites·11 claims
- 2469US8450779B2Graphene based three-dimensional integrated circuit deviceGUO DECHAO·Filed 2010·Granted May 28, 2013·5 cites·5 claims
- 2569US8408262B2Adaptive chuck for planar bonding between substratesGUO DECHAO·Filed 2009·Granted Apr 2, 2013·2 cites·20 claims
- 2669US8138547B2MOSFET on silicon-on-insulator REDX with asymmetric source-drain contactsGUO DECHAO·Filed 2009·Granted Mar 20, 2012·4 cites·12 claims
- 2767US8653602B2Transistor having replacement metal gate and process for fabricating the sameGUO DECHAO·Filed 2010·Granted Feb 18, 2014·2 cites·9 claims
- 2864US8105893B2Diffusion sidewall for a semiconductor structureGUO DECHAO·Filed 2009·Granted Jan 31, 2012·2 cites·16 claims
- 2956US8916405B2Light emitting diode (LED) using carbon materialsGUO DECHAO·Filed 2011·Granted Dec 23, 2014·0 cites·14 claims
- 3053US8742475B2Field effect transistor device and fabricationGUO DECHAO·Filed 2012·Granted Jun 3, 2014·0 cites·18 claims
- 3152US8901626B2Self-aligned contacts for field effect transistor devicesGUO DECHAO·Filed 2012·Granted Dec 2, 2014·0 cites·16 claims
- 3252US2012187505A1Self-aligned III-V MOSFET fabrication with in-situ III-V epitaxy and in-situ metal epitaxy and contact formationGUO DECHAO·Filed 2011·Application pending·0 cites
- 3351US8946853B2Diffusion sidewall for a semiconductor structureGUO DECHAO·Filed 2012·Granted Feb 3, 2015·0 cites·6 claims
- 3450US9312358B2Partially-blocked well implant to improve diode ideality with SiGe anodeGUO DECHAO·Filed 2012·Granted Apr 12, 2016·0 cites·17 claims
- 3550US9252234B2Partially-blocked well implant to improve diode ideality with SiGe anodeGUO DECHAO·Filed 2012·Granted Feb 2, 2016·0 cites·17 claims
- 3650US2012312452A1Adaptive chuck for planar bonding between substratesGUO DECHAO·Filed 2012·Application pending·0 cites
- 3749US9041057B2Field effect transistor device with shaped conduction channelGUO DECHAO·Filed 2012·Granted May 26, 2015·0 cites·6 claims
- 3849US2012299125A1Self-aligned contactsGUO DECHAO·Filed 2012·Application pending·0 cites
- 3947US8309418B2Field effect transistor device with shaped conduction channelGUO DECHAO·Filed 2010·Granted Nov 13, 2012·0 cites·8 claims
- 4047US2012286360A1Field Effect Transistor Device with Self-Aligned Junction and SpacerGUO DECHAO·Filed 2012·Application pending·0 cites
- 4147US2012292701A1Silicon on Insulator Field Effect DeviceGUO DECHAO·Filed 2012·Application pending·0 cites
- 4247US2012286371A1Field Effect Transistor Device With Self-Aligned JunctionGUO DECHAO·Filed 2012·Application pending·0 cites
- 4344US2012038007A1Field Effect Transistor Device With Self-Aligned JunctionGUO DECHAO·Filed 2010·Application pending·0 cites
- 4444US2012038008A1Field Effect Transistor Device with Self-Aligned Junction and SpacerGUO DECHAO·Filed 2010·Application pending·0 cites
- 4543US2012037991A1Silicon on Insulator Field Effect DeviceGUO DECHAO·Filed 2010·Application pending·0 cites
- 4638US2012306026A1Replacement gate electrode with a tungsten diffusion barrier layerGUO DECHAO·Filed 2011·Application pending·0 cites
Join the waitlist — get patent alerts
Get an alert when GUO DECHAO files or is granted a new patent.
We store only your email — no account needed. See our privacy policy.
Counts cover granted patents and pending applications in the PatentIndex corpus. How scoring works →