Assignee
GRANDIS INC
US·70 granted patents·6 pending applications·11,111 citations·filing 2002–2010
Top patents by PatentIndex Score
76 records- 0199US7576956B2Magnetic tunnel junction having diffusion stop layerGRANDIS INC·Filed 2005·Granted Aug 18, 2009·215 cites·44 claims
- 0299US7518835B2Magnetic elements having a bias field and magnetic memory devices using the magnetic elementsGRANDIS INC·Filed 2005·Granted Apr 14, 2009·128 cites·23 claims
- 0399US7515457B2Current driven memory cells having enhanced current and enhanced current symmetryGRANDIS INC·Filed 2006·Granted Apr 7, 2009·224 cites·18 claims
- 0499US7489541B2Spin-transfer switching magnetic elements using ferrimagnets and magnetic memories using the magnetic elementsGRANDIS INC·Filed 2005·Granted Feb 10, 2009·157 cites·33 claims
- 0599US7486552B2Method and system for providing a spin transfer device with improved switching characteristicsGRANDIS INC·Filed 2007·Granted Feb 3, 2009·185 cites·52 claims
- 0699US7286395B2Current driven switched magnetic storage cells having improved read and write margins and magnetic memories using such cellsGRANDIS INC·Filed 2005·Granted Oct 23, 2007·196 cites·40 claims
- 0799US7272034B1Current driven switching of magnetic storage cells utilizing spin transfer and magnetic memories using such cellsGRANDIS INC·Filed 2005·Granted Sep 18, 2007·243 cites·37 claims
- 0899US7272035B1Current driven switching of magnetic storage cells utilizing spin transfer and magnetic memories using such cellsGRANDIS INC·Filed 2005·Granted Sep 18, 2007·251 cites·11 claims
- 0999US7245462B2Magnetoresistive element having reduced spin transfer induced noiseGRANDIS INC·Filed 2004·Granted Jul 17, 2007·152 cites·13 claims
- 1099US7242048B2Magnetic elements with ballistic magnetoresistance utilizing spin-transfer and an MRAM device using such magnetic elementsGRANDIS INC·Filed 2006·Granted Jul 10, 2007·110 cites·16 claims
- 1199US7230845B1Magnetic devices having a hard bias field and magnetic memory devices using the magnetic devicesGRANDIS INC·Filed 2005·Granted Jun 12, 2007·158 cites·29 claims
- 1299US7227773B1Magnetic element utilizing spin-transfer and half-metals and an MRAM device using the magnetic elementGRANDIS INC·Filed 2005·Granted Jun 5, 2007·154 cites·30 claims
- 1399US7190611B2Spin-transfer multilayer stack containing magnetic layers with resettable magnetizationGRANDIS INC·Filed 2003·Granted Mar 13, 2007·283 cites·63 claims
- 1499US7187577B1Method and system for providing current balanced writing for memory cells and magnetic devicesGRANDIS INC·Filed 2005·Granted Mar 6, 2007·393 cites·36 claims
- 1599US7126202B2Spin scattering and heat assisted switching of a magnetic elementGRANDIS INC·Filed 2004·Granted Oct 24, 2006·163 cites·19 claims
- 1699US6992359B2Spin transfer magnetic element with free layers having high perpendicular anisotropy and in-plane equilibrium magnetizationGRANDIS INC·Filed 2004·Granted Jan 31, 2006·425 cites·33 claims
- 1799US6985385B2Magnetic memory element utilizing spin transfer switching and storing multiple bitsGRANDIS INC·Filed 2003·Granted Jan 10, 2006·331 cites·56 claims
- 1899US6967863B2Perpendicular magnetization magnetic element utilizing spin transferGRANDIS INC·Filed 2004·Granted Nov 22, 2005·309 cites·40 claims
- 1999US6958927B1Magnetic element utilizing spin-transfer and half-metals and an MRAM device using the magnetic elementGRANDIS INC·Filed 2002·Granted Oct 25, 2005·287 cites·108 claims
- 2099US6888742B1Off-axis pinned layer magnetic element utilizing spin transfer and an MRAM device using the magnetic elementGRANDIS INC·Filed 2002·Granted May 3, 2005·303 cites·42 claims
- 2199US6838740B2Thermally stable magnetic elements utilizing spin transfer and an MRAM device using the magnetic elementGRANDIS INC·Filed 2002·Granted Jan 4, 2005·288 cites·43 claims
- 2299US6714444B2Magnetic element utilizing spin transfer and an MRAM device using the magnetic elementGRANDIS INC·Filed 2002·Granted Mar 30, 2004·470 cites·21 claims
- 2398US7531882B2Spin transfer magnetic element with free layers having high perpendicular anisotropy and in-plane equilibrium magnetizationGRANDIS INC·Filed 2005·Granted May 12, 2009·42 cites·14 claims
- 2498US7502249B1Method and system for using a pulsed field to assist spin transfer induced switching of magnetic memory elementsGRANDIS INC·Filed 2007·Granted Mar 10, 2009·315 cites·20 claims
- 2598US7486551B1Method and system for providing domain wall assisted switching of magnetic elements and magnetic memories using such magnetic elementsGRANDIS INC·Filed 2007·Granted Feb 3, 2009·150 cites·31 claims
- 2698US7430135B2Current-switched spin-transfer magnetic devices with reduced spin-transfer switching current densityGRANDIS INC·Filed 2005·Granted Sep 30, 2008·218 cites·35 claims
- 2798US7369427B2Magnetic elements with spin engineered insertion layers and MRAM devices using the magnetic elementsGRANDIS INC·Filed 2004·Granted May 6, 2008·201 cites·26 claims
- 2898US7345912B2Method and system for providing a magnetic memory structure utilizing spin transferGRANDIS INC·Filed 2006·Granted Mar 18, 2008·236 cites·17 claims
- 2998US7289356B2Fast magnetic memory devices utilizing spin transfer and magnetic elements used thereinGRANDIS INC·Filed 2005·Granted Oct 30, 2007·193 cites·49 claims
- 3098US7282755B2Stress assisted current driven switching for magnetic memory applicationsGRANDIS INC·Filed 2003·Granted Oct 16, 2007·180 cites·23 claims
- 3198US7241631B2MTJ elements with high spin polarization layers configured for spin-transfer switching and spintronics devices using the magnetic elementsGRANDIS INC·Filed 2004·Granted Jul 10, 2007·189 cites·63 claims
- 3298US7242045B2Spin transfer magnetic element having low saturation magnetization free layersGRANDIS INC·Filed 2004·Granted Jul 10, 2007·220 cites·46 claims
- 3398US7233039B2Spin transfer magnetic elements with spin depolarization layersGRANDIS INC·Filed 2004·Granted Jun 19, 2007·171 cites·21 claims
- 3498US7110287B2Method and system for providing heat assisted switching of a magnetic element utilizing spin transferGRANDIS INC·Filed 2004·Granted Sep 19, 2006·193 cites·35 claims
- 3598US7106624B2Magnetic element utilizing spin transfer and an mram device using the magnetic elementGRANDIS INC·Filed 2005·Granted Sep 12, 2006·116 cites·19 claims
- 3698US7009877B1Three-terminal magnetostatically coupled spin transfer-based MRAM cellGRANDIS INC·Filed 2003·Granted Mar 7, 2006·389 cites·31 claims
- 3798US6933155B2Methods for providing a sub .15 micron magnetic memory structureGRANDIS INC·Filed 2003·Granted Aug 23, 2005·263 cites·13 claims
- 3898US6920063B2Magnetic element utilizing spin transfer and an MRAM device using the magnetic elementGRANDIS INC·Filed 2003·Granted Jul 19, 2005·201 cites·28 claims
- 3998US6847547B2Magnetostatically coupled magnetic elements utilizing spin transfer and an MRAM device using the magnetic elementGRANDIS INC·Filed 2003·Granted Jan 25, 2005·327 cites·33 claims
- 4098US6829161B2Magnetostatically coupled magnetic elements utilizing spin transfer and an MRAM device using the magnetic elementGRANDIS INC·Filed 2003·Granted Dec 7, 2004·309 cites·45 claims
- 4197US7379327B2Current driven switching of magnetic storage cells utilizing spin transfer and magnetic memories using such cells having enhanced read and write marginsGRANDIS INC·Filed 2006·Granted May 27, 2008·243 cites·25 claims
- 4297US7161829B2Current confined pass layer for magnetic elements utilizing spin-transfer and an MRAM device using such magnetic elementsGRANDIS INC·Filed 2003·Granted Jan 9, 2007·175 cites·34 claims
- 4397US7098494B2Re-configurable logic elements using heat assisted magnetic tunneling elementsGRANDIS INC·Filed 2004·Granted Aug 29, 2006·186 cites·24 claims
- 4497US7088609B2Spin barrier enhanced magnetoresistance effect element and magnetic memory using the sameGRANDIS INC·Filed 2004·Granted Aug 8, 2006·228 cites·45 claims
- 4597US7057921B2Spin barrier enhanced dual magnetoresistance effect element and magnetic memory using the sameGRANDIS INC·Filed 2004·Granted Jun 6, 2006·212 cites·45 claims
- 4695US7224601B2Oscillating-field assisted spin torque switching of a magnetic tunnel junction memory elementGRANDIS INC·Filed 2005·Granted May 29, 2007·358 cites·23 claims
- 4794US7742328B2Method and system for providing spin transfer tunneling magnetic memories utilizing non-planar transistorsGRANDIS INC·Filed 2007·Granted Jun 22, 2010·42 cites·20 claims
- 4894US7663848B1Magnetic memories utilizing a magnetic element having an engineered free layerGRANDIS INC·Filed 2006·Granted Feb 16, 2010·31 cites·24 claims
- 4993US7916433B2Magnetic element utilizing free layer engineeringGRANDIS INC·Filed 2010·Granted Mar 29, 2011·12 cites·15 claims
- 5093US7760474B1Magnetic element utilizing free layer engineeringGRANDIS INC·Filed 2006·Granted Jul 20, 2010·23 cites·4 claims
Showing the top 50 of 76 patent records by PatentIndex Score.
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