Assignee
GLOBAL FOUNDRIES INC
KY·19 granted patents·16 pending applications·149 citations·filing 2006–2015
Top patents by PatentIndex Score
35 records- 0195US7962314B2Mechanism for profiling program software running on a processorGLOBAL FOUNDRIES INC·Filed 2007·Granted Jun 14, 2011·60 cites·14 claims
- 0291US7871873B2Method of forming fin structures using a sacrificial etch stop layer on bulk semiconductor materialGLOBAL FOUNDRIES INC·Filed 2009·Granted Jan 18, 2011·23 cites·19 claims
- 0390US8609531B1Methods of selectively forming ruthenium liner layerGLOBAL FOUNDRIES INC·Filed 2013·Granted Dec 17, 2013·11 cites·18 claims
- 0487US9076791B1MOS transistor operated as OTP cell with gate dielectric operating as an e-fuse elementGLOBAL FOUNDRIES INC·Filed 2014·Granted Jul 7, 2015·8 cites·20 claims
- 0585US8877559B2Through-silicon via with sidewall air gapGLOBAL FOUNDRIES INC·Filed 2013·Granted Nov 4, 2014·6 cites·17 claims
- 0685US7685410B2Redirect recovery cache that receives branch misprediction redirects and caches instructions to be dispatched in response to the redirectsGLOBAL FOUNDRIES INC·Filed 2007·Granted Mar 23, 2010·15 cites·27 claims
- 0785US7601641B1Two step optical planarizing layer etchGLOBAL FOUNDRIES INC·Filed 2008·Granted Oct 13, 2009·10 cites·18 claims
- 0881US7790624B2Methods for removing a metal-comprising material from a semiconductor substrateGLOBAL FOUNDRIES INC·Filed 2008·Granted Sep 7, 2010·10 cites·19 claims
- 0968US7943999B2Stress enhanced MOS circuitsGLOBAL FOUNDRIES INC·Filed 2008·Granted May 17, 2011·3 cites·12 claims
- 1063US9142673B2Devices and methods of forming bulk FinFETS with lateral seg for source and drain on dielectricsGLOBAL FOUNDRIES INC·Filed 2013·Granted Sep 22, 2015·1 cites·6 claims
- 1160US9280682B2Automated management of private informationGLOBAL FOUNDRIES INC·Filed 2012·Granted Mar 8, 2016·1 cites·19 claims
- 1260US9153534B2Semiconductor fuse with enhanced post-programming resistanceGLOBAL FOUNDRIES INC·Filed 2014·Granted Oct 6, 2015·0 cites·19 claims
- 1359US7776494B2Lithographic mask and methods for fabricating a semiconductor deviceGLOBAL FOUNDRIES INC·Filed 2006·Granted Aug 17, 2010·1 cites·20 claims
- 1453US9337041B2Anisotropic dielectric material gate spacer for a field effect transistorGLOBAL FOUNDRIES INC·Filed 2014·Granted May 10, 2016·0 cites·17 claims
- 1553US2014167110A1Partial poly amorphization for channeling preventionGLOBAL FOUNDRIES INC·Filed 2014·Application pending·0 cites
- 1651US9455678B2Location and orientation based volume controlGLOBAL FOUNDRIES INC·Filed 2014·Granted Sep 27, 2016·0 cites·20 claims
- 1751US9355481B2Dynamic visualization for optimization processesGLOBAL FOUNDRIES INC·Filed 2014·Granted May 31, 2016·0 cites·12 claims
- 1850US2015228656A1REPLACEMENT GATE COMPATIBLE eDRAM TRANSISTOR WITH RECESSED CHANNELGLOBAL FOUNDRIES INC·Filed 2014·Application pending·0 cites
- 1949US9484252B2Integrated circuits including selectively deposited metal capping layers on copper lines and methods for fabricating the sameGLOBAL FOUNDRIES INC·Filed 2014·Granted Nov 1, 2016·0 cites·19 claims
- 2046US8871649B2Methods of forming trench/hole type features in a layer of material of an integrated circuit productGLOBAL FOUNDRIES INC·Filed 2013·Granted Oct 28, 2014·0 cites·20 claims
- 2144US2015348907A1Reduced capacitance interlayer structures and fabrication methodsGLOBAL FOUNDRIES INC·Filed 2015·Application pending·0 cites
- 2243US2015187909A1Methods for fabricating multiple-gate integrated circuitsGLOBAL FOUNDRIES INC·Filed 2013·Application pending·0 cites
- 2342US2015162439A1Semiconductor device including a transistor having a low doped drift region and method for the formation thereofGLOBAL FOUNDRIES INC·Filed 2013·Application pending·0 cites
- 2441US2015001628A1Semiconductor structure with improved isolation and method of fabrication to enable fine pitch transistor arraysGLOBAL FOUNDRIES INC·Filed 2013·Application pending·0 cites
- 2541US2015179740A1Transistor device with strained layerGLOBAL FOUNDRIES INC·Filed 2013·Application pending·0 cites
- 2641US2014170533A1Extreme ultraviolet lithography (euvl) alternating phase shift maskGLOBAL FOUNDRIES INC·Filed 2012·Application pending·0 cites
- 2741US2014330786A1Computer-implemented methods and systems for revision control of integrated circuit layout recipe filesGLOBAL FOUNDRIES INC·Filed 2013·Application pending·0 cites
- 2840US2014167265A1Methods of forming a bi-layer cap layer on copper-based conductive structures and devices with such a cap layerGLOBAL FOUNDRIES INC·Filed 2012·Application pending·0 cites
- 2939US2015076654A1Enlarged fin tip profile for fins of a field effect transistor (finfet) deviceGLOBAL FOUNDRIES INC·Filed 2013·Application pending·0 cites
- 3039US2015024584A1Methods for forming integrated circuits with reduced replacement metal gate height variabilityGLOBAL FOUNDRIES INC·Filed 2013·Application pending·0 cites
- 3138US2014211175A1Enhancing resolution in lithographic processes using high refractive index fluidsGLOBAL FOUNDRIES INC·Filed 2013·Application pending·0 cites
- 3238US2014353733A1Protection of the gate stack encapsulationGLOBAL FOUNDRIES INC·Filed 2013·Application pending·0 cites
- 3337US9928335B2Temperature-compliant integrated circuitsGLOBAL FOUNDRIES INC·Filed 2015·Granted Mar 27, 2018·0 cites·19 claims
- 3436US2016266332A1Optical die packagingGLOBAL FOUNDRIES INC·Filed 2015·Application pending·0 cites
- 3534US2016254345A1Metal-insulator-metal capacitor architectureGLOBAL FOUNDRIES INC·Filed 2015·Application pending·0 cites
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