Assignee
FUJITSU QUANTUM DEVICES LTD
JP·100 granted patents·5 pending applications·1,474 citations·filing 1998–2008
Top patents by PatentIndex Score
105 records- 0195US6903402B2Interdigital capacitor having a cutting target portionFUJITSU QUANTUM DEVICES LTD·Filed 2003·Granted Jun 7, 2005·100 cites·24 claims
- 0294US6949811B2Device having interdigital capacitorFUJITSU QUANTUM DEVICES LTD·Filed 2003·Granted Sep 27, 2005·96 cites·37 claims
- 0394US6788521B2Capacitor and method for fabricating the sameFUJITSU QUANTUM DEVICES LTD·Filed 2002·Granted Sep 7, 2004·90 cites·5 claims
- 0488US6331799B1Bias circuit for control input of power transistorFUJITSU QUANTUM DEVICES LTD·Filed 2000·Granted Dec 18, 2001·47 cites·21 claims
- 0587US6586813B2High-speed compound semiconductor device operable at large output power with minimum leakage currentFUJITSU QUANTUM DEVICES LTD·Filed 2001·Granted Jul 1, 2003·63 cites·10 claims
- 0687US6566954B2High frequency amplifier bias circuit, high frequency power amplifier, and communication deviceFUJITSU QUANTUM DEVICES LTD·Filed 2001·Granted May 20, 2003·41 cites·31 claims
- 0786US7091527B2Semiconductor photodetection deviceFUJITSU QUANTUM DEVICES LTD·Filed 2005·Granted Aug 15, 2006·8 cites·11 claims
- 0885US6690237B2High frequency power amplifier, and communication apparatusFUJITSU QUANTUM DEVICES LTD·Filed 2001·Granted Feb 10, 2004·36 cites·16 claims
- 0985US6037245AHigh-speed semiconductor device having a dual-layer gate structure and a fabrication process thereofFUJITSU QUANTUM DEVICES LTD·Filed 1999·Granted Mar 14, 2000·60 cites·12 claims
- 1084US6274893B1Compound semiconductor device and method of manufacturing the sameFUJITSU QUANTUM DEVICES LTD·Filed 1999·Granted Aug 14, 2001·60 cites·18 claims
- 1184US6011281ASemiconductor device having an ohmic contact and a Schottky contact, with a barrier layer interposed between the ohmic contact and the Schottky contactFUJITSU QUANTUM DEVICES LTD·Filed 1998·Granted Jan 4, 2000·53 cites·18 claims
- 1283US6900482B2Semiconductor device having divided active regions with comb-teeth electrodes thereonFUJITSU QUANTUM DEVICES LTD·Filed 2002·Granted May 31, 2005·35 cites·10 claims
- 1381US6693337B2Semiconductor photodetection deviceFUJITSU QUANTUM DEVICES LTD·Filed 2001·Granted Feb 17, 2004·25 cites·16 claims
- 1481US6628176B1High-frequency input impedance matching circuit, high-frequency output impedance matching circuit and semiconductor integrated circuitFUJITSU QUANTUM DEVICES LTD·Filed 2000·Granted Sep 30, 2003·24 cites·4 claims
- 1579US7626443B2Switching circuit, switching module and method of controlling the switching circuitFUJITSU QUANTUM DEVICES LTD·Filed 2008·Granted Dec 1, 2009·8 cites·2 claims
- 1679US6664624B2Semiconductor device and manufacturing method thereofFUJITSU QUANTUM DEVICES LTD·Filed 2002·Granted Dec 16, 2003·27 cites·14 claims
- 1777US6639441B2Clock signal correction circuit and semiconductor device implementing the sameFUJITSU QUANTUM DEVICES LTD·Filed 2002·Granted Oct 28, 2003·23 cites·12 claims
- 1876US6924541B2Semiconductor photodetection deviceFUJITSU QUANTUM DEVICES LTD·Filed 2003·Granted Aug 2, 2005·17 cites·23 claims
- 1975US6972638B2Directional coupler and electronic device using the sameFUJITSU QUANTUM DEVICES LTD·Filed 2003·Granted Dec 6, 2005·17 cites·22 claims
- 2074US6774484B2High frequency semiconductor deviceFUJITSU QUANTUM DEVICES LTD·Filed 2002·Granted Aug 10, 2004·22 cites·6 claims
- 2172US6930334B2High frequency semiconductor deviceFUJITSU QUANTUM DEVICES LTD·Filed 2002·Granted Aug 16, 2005·24 cites·15 claims
- 2271US6831265B2Photodetector having improved photoresponsitivity over a broad wavelength regionFUJITSU QUANTUM DEVICES LTD·Filed 2002·Granted Dec 14, 2004·19 cites·9 claims
- 2371US6504189B1Semiconductor device having a microstrip lineFUJITSU QUANTUM DEVICES LTD·Filed 1999·Granted Jan 7, 2003·45 cites·8 claims
- 2471US6489671B2Semiconductor integrated circuit having three-dimensional interconnection linesFUJITSU QUANTUM DEVICES LTD·Filed 2002·Granted Dec 3, 2002·19 cites·20 claims
- 2571US6395588B2Compound semiconductor device and method of manufacturing the sameFUJITSU QUANTUM DEVICES LTD·Filed 2001·Granted May 28, 2002·16 cites·4 claims
- 2671US6078071AHigh-speed compound semiconductor device having an improved gate structureFUJITSU QUANTUM DEVICES LTD·Filed 1999·Granted Jun 20, 2000·26 cites·6 claims
- 2767US7303933B2Process of manufacturing a semiconductor deviceFUJITSU QUANTUM DEVICES LTD·Filed 2005·Granted Dec 4, 2007·2 cites·3 claims
- 2867US6329677B1Field effect transistorFUJITSU QUANTUM DEVICES LTD·Filed 1999·Granted Dec 11, 2001·37 cites·6 claims
- 2966US6712284B2High frequency semiconductor deviceFUJITSU QUANTUM DEVICES LTD·Filed 2002·Granted Mar 30, 2004·14 cites·20 claims
- 3066US6587604B2Optical semiconductor deviceFUJITSU QUANTUM DEVICES LTD·Filed 2001·Granted Jul 1, 2003·15 cites·24 claims
- 3166US6242766B1High electron mobility transistorFUJITSU QUANTUM DEVICES LTD·Filed 1999·Granted Jun 5, 2001·26 cites·4 claims
- 3264US6982441B2Semiconductor device with a super lattice bufferFUJITSU QUANTUM DEVICES LTD·Filed 2002·Granted Jan 3, 2006·12 cites·26 claims
- 3364US6944252B2Phase comparator circuitFUJITSU QUANTUM DEVICES LTD·Filed 2001·Granted Sep 13, 2005·9 cites·7 claims
- 3464US6642099B2Method of manufacturing compound semiconductor deviceFUJITSU QUANTUM DEVICES LTD·Filed 2002·Granted Nov 4, 2003·12 cites·6 claims
- 3564US6411144B1Phase-locked loop circuitFUJITSU QUANTUM DEVICES LTD·Filed 2000·Granted Jun 25, 2002·17 cites·4 claims
- 3664US6316297B1Semiconductor device and method for fabricating the sameFUJITSU QUANTUM DEVICES LTD·Filed 1999·Granted Nov 13, 2001·23 cites·10 claims
- 3763US6504190B2FET whose source electrode overhangs gate electrode and its manufacture methodFUJITSU QUANTUM DEVICES LTD·Filed 2001·Granted Jan 7, 2003·14 cites·8 claims
- 3863US6456125B1Distributed high frequency circuit equipped with bias bypass line to reduce chip areaFUJITSU QUANTUM DEVICES LTD·Filed 2001·Granted Sep 24, 2002·11 cites·11 claims
- 3963US6329230B1High-speed compound semiconductor device having an improved gate structureFUJITSU QUANTUM DEVICES LTD·Filed 2000·Granted Dec 11, 2001·9 cites·4 claims
- 4061US6146931AMethod of forming a semiconductor device having a barrier layer interposed between the ohmic contact and the schottky contactFUJITSU QUANTUM DEVICES LTD·Filed 1999·Granted Nov 14, 2000·17 cites·2 claims
- 4159US6487027B2Optical semiconductor module having a capability of temperature regulationFUJITSU QUANTUM DEVICES LTD·Filed 2001·Granted Nov 26, 2002·13 cites·16 claims
- 4258US6955994B2Method of manufacturing semiconductor device and method of manufacturing optical wave guideFUJITSU QUANTUM DEVICES LTD·Filed 2001·Granted Oct 18, 2005·4 cites·40 claims
- 4358US6800878B2Field-effect type compound semiconductor device and method for fabricating the sameFUJITSU QUANTUM DEVICES LTD·Filed 2002·Granted Oct 5, 2004·11 cites·15 claims
- 4458US6539040B2Laser diode and fabrication process thereofFUJITSU QUANTUM DEVICES LTD·Filed 2001·Granted Mar 25, 2003·5 cites·20 claims
- 4558US6529051B2Frequency multiplier without spurious oscillationFUJITSU QUANTUM DEVICES LTD·Filed 2001·Granted Mar 4, 2003·6 cites·25 claims
- 4657US6825809B2High-frequency semiconductor deviceFUJITSU QUANTUM DEVICES LTD·Filed 2002·Granted Nov 30, 2004·11 cites·21 claims
- 4757US6753587B2Semiconductor photo detecting device and its manufacturing methodFUJITSU QUANTUM DEVICES LTD·Filed 2001·Granted Jun 22, 2004·7 cites·8 claims
- 4857US6214639B1Method of producing a semiconductor deviceFUJITSU QUANTUM DEVICES LTD·Filed 1999·Granted Apr 10, 2001·23 cites·15 claims
- 4956US6768147B2Semiconductor device and method of fabricating the sameFUJITSU QUANTUM DEVICES LTD·Filed 2003·Granted Jul 27, 2004·8 cites·13 claims
- 5056US6638873B2Semiconductor device producing methodFUJITSU QUANTUM DEVICES LTD·Filed 2002·Granted Oct 28, 2003·10 cites·28 claims
Showing the top 50 of 105 patent records by PatentIndex Score.
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