Assignee
FINWAVE SEMICONDUCTOR INC
US·0 granted patents·9 pending applications·0 citations·filing 2022–2025
Top patents by PatentIndex Score
9 records- 0160US2025309896A1High Pull-up Slew Rate and Low Quiescent Power for Gate Driver and Logic ElementsFINWAVE SEMICONDUCTOR INC·Filed 2025·Application pending·0 cites
- 0259US2025098274A1Iii-nitride transistor with top and bottom cap layers with etch stopFINWAVE SEMICONDUCTOR INC·Filed 2024·Application pending·0 cites
- 0353US2026040648A1III-Nitride Transistors with Field Plate and Methods of FabricationFINWAVE SEMICONDUCTOR INC·Filed 2025·Application pending·0 cites
- 0451US2024305288A1Asymmetric Device Size StackingFINWAVE SEMICONDUCTOR INC·Filed 2024·Application pending·0 cites
- 0549US2025159960A1Iii-nitride transistor with high n doping in access regionFINWAVE SEMICONDUCTOR INC·Filed 2024·Application pending·0 cites
- 0648US2023043810A1Iii-nitride transistor with electrically connected p-type layer in access regionFINWAVE SEMICONDUCTOR INC·Filed 2022·Application pending·0 cites
- 0742US2025301687A1III-Nitride Semiconductor Devices with Reduced Effective SizeFINWAVE SEMICONDUCTOR INC·Filed 2025·Application pending·0 cites
- 0842US2025267901A1Semiconductor structure with patterned dielectric layer beneath field platesFINWAVE SEMICONDUCTOR INC·Filed 2025·Application pending·0 cites
- 0940US2025022928A1Contact structure for iii-nitride transistors with cap layersFINWAVE SEMICONDUCTOR INC·Filed 2024·Application pending·0 cites
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