Assignee
DOVE BARRY
US·4 granted patents·13 citations·filing 2009–2011
Top patents by PatentIndex Score
4 records- 0173US8216904B2Strained transistor and method for forming the sameDOVE BARRY·Filed 2009·Granted Jul 10, 2012·7 cites·13 claims
- 0267US8609508B2Method of fabricating an integrated circuit having a strain inducing hollow trench isolation regionDOVE BARRY·Filed 2010·Granted Dec 17, 2013·3 cites·14 claims
- 0365US8716752B2Structure and method for making a strained silicon transistorDOVE BARRY·Filed 2010·Granted May 6, 2014·3 cites·16 claims
- 0443US8659059B2Strained transistor structureDOVE BARRY·Filed 2011·Granted Feb 25, 2014·0 cites·10 claims
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