Assignee
DATTA SUMAN
US·7 granted patents·9 pending applications·74 citations·filing 2004–2013
Top patents by PatentIndex Score
16 records- 0196US8129795B2Inducing strain in the channels of metal gate transistorsDATTA SUMAN·Filed 2011·Granted Mar 6, 2012·29 cites·5 claims
- 0295US8421059B2Strain-inducing semiconductor regionsDATTA SUMAN·Filed 2010·Granted Apr 16, 2013·15 cites·5 claims
- 0394US8530884B2Strain inducing semiconductor regionsDATTA SUMAN·Filed 2011·Granted Sep 10, 2013·13 cites·15 claims
- 0488US8120065B2Tensile strained NMOS transistor using group III-N source/drain regionsDATTA SUMAN·Filed 2009·Granted Feb 21, 2012·12 cites·17 claims
- 0585US8518768B2Extreme high mobility CMOS logicDATTA SUMAN·Filed 2012·Granted Aug 27, 2013·4 cites·7 claims
- 0671US8802517B2Extreme high mobility CMOS logicDATTA SUMAN·Filed 2013·Granted Aug 12, 2014·1 cites·12 claims
- 0756US8841180B2Strain-inducing semiconductor regionsDATTA SUMAN·Filed 2013·Granted Sep 23, 2014·0 cites·10 claims
- 0856US2009159872A1Reducing Ambipolar Conduction in Carbon Nanotube TransistorsDATTA SUMAN·Filed 2009·Application pending·0 cites
- 0946US2010248209A1Three-dimensional integrated circuit for analyte detectionDATTA SUMAN·Filed 2006·Application pending·0 cites
- 1046US2007040227A1Reducing gate dielectric material to form a metal gate electrode extensionDATTA SUMAN·Filed 2006·Application pending·0 cites
- 1146US2007029627A1Reducing the dielectric constant of a portion of a gate dielectricDATTA SUMAN·Filed 2006·Application pending·0 cites
- 1246US2006063318A1Reducing ambipolar conduction in carbon nanotube transistorsDATTA SUMAN·Filed 2004·Application pending·0 cites
- 1341US2008237678A1On-chip memory cell and method of manufacturing sameDATTA SUMAN·Filed 2007·Application pending·0 cites
- 1441US2008142786A1Insulated gate for group iii-v devicesDATTA SUMAN·Filed 2006·Application pending·0 cites
- 1541US2008157225A1SRAM and logic transistors with variable height multi-gate transistor architectureDATTA SUMAN·Filed 2006·Application pending·0 cites
- 1638US2006148182A1Quantum well transistor using high dielectric constant dielectric layerDATTA SUMAN·Filed 2005·Application pending·0 cites
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Counts cover granted patents and pending applications in the PatentIndex corpus. How scoring works →