Assignee
CURRO GIUSEPPE
IT·2 granted patents·0 citations·filing 2006–2011
Technology mixH10D2
Top patents by PatentIndex Score
2 records- 0141US8324669B2Process for manufacturing a MOS device with intercell ion implant confined to the gate electrode regionCURRO GIUSEPPE·Filed 2011·Granted Dec 4, 2012·0 cites·23 claims
- 0238US8158463B2Process and method for manufacturing a MOS device with intercell ion implant using one or more parallel enrichment windowsCURRO' GIUSEPPE·Filed 2006·Granted Apr 17, 2012·0 cites·15 claims
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