Individual holder
CHUNG SHINE C
US·61 granted patents·5 pending applications·2,735 citations·filing 2002–2018
Individually held — no corporate assignee on record.
Top patents by PatentIndex Score
66 records- 0199US9818478B2Programmable resistive device and memory using diode as selectorCHUNG SHINE C·Filed 2013·Granted Nov 14, 2017·330 cites·28 claims
- 0299US9305973B2One-time programmable memories using polysilicon diodes as program selectorsCHUNG SHINE C·Filed 2013·Granted Apr 5, 2016·36 cites·28 claims
- 0399US8854859B2Programmably reversible resistive device cells using CMOS logic processesCHUNG SHINE C·Filed 2011·Granted Oct 7, 2014·69 cites·29 claims
- 0499US8848423B2Circuit and system of using FinFET for building programmable resistive devicesCHUNG SHINE C·Filed 2013·Granted Sep 30, 2014·70 cites·30 claims
- 0599US8817563B2Sensing circuit for programmable resistive device using diode as program selectorCHUNG SHINE C·Filed 2011·Granted Aug 26, 2014·59 cites·19 claims
- 0699US8760904B2One-Time Programmable memories using junction diodes as program selectorsCHUNG SHINE C·Filed 2011·Granted Jun 24, 2014·57 cites·22 claims
- 0799US8649203B2Reversible resistive memory using polysilicon diodes as program selectorsCHUNG SHINE C·Filed 2011·Granted Feb 11, 2014·54 cites·19 claims
- 0899US8644049B2Circuit and system of using polysilicon diode as program selector for one-time programmable devicesCHUNG SHINE C·Filed 2011·Granted Feb 4, 2014·57 cites·19 claims
- 0999US8576602B2One-time programmable memories using polysilicon diodes as program selectorsCHUNG SHINE C·Filed 2011·Granted Nov 5, 2013·46 cites·21 claims
- 1099US8570800B2Memory using a plurality of diodes as program selectors with at least one being a polysilicon diodeCHUNG SHINE C·Filed 2011·Granted Oct 29, 2013·67 cites·21 claims
- 1199US8559208B2Programmably reversible resistive device cells using polysilicon diodesCHUNG SHINE C·Filed 2011·Granted Oct 15, 2013·51 cites·23 claims
- 1299US8514606B2Circuit and system of using junction diode as program selector for one-time programmable devicesCHUNG SHINE C·Filed 2011·Granted Aug 20, 2013·79 cites·19 claims
- 1399US8488359B2Circuit and system of using junction diode as program selector for one-time programmable devicesCHUNG SHINE C·Filed 2012·Granted Jul 16, 2013·89 cites·25 claims
- 1499US8488364B2Circuit and system of using a polysilicon diode as program selector for resistive devices in CMOS logic processesCHUNG SHINE C·Filed 2011·Granted Jul 16, 2013·74 cites·20 claims
- 1599US8482972B2Memory devices using a plurality of diodes as program selectors with at least one being a polysilicon diodeCHUNG SHINE C·Filed 2011·Granted Jul 9, 2013·79 cites·23 claims
- 1699US7546438B2Algorithm mapping, specialized instructions and architecture features for smart memory computingCHUNG SHINE C·Filed 2005·Granted Jun 9, 2009·425 cites·9 claims
- 1798US9460807B2One-time programmable memory devices using FinFET technologyCHUNG SHINE C·Filed 2015·Granted Oct 4, 2016·27 cites·29 claims
- 1898US9343176B2Low-pin-count non-volatile memory interface with soft programming capabilityCHUNG SHINE C·Filed 2015·Granted May 17, 2016·32 cites·20 claims
- 1998US9070437B2Circuit and system of using junction diode as program selector for one-time programmable devices with heat sinkCHUNG SHINE C·Filed 2013·Granted Jun 30, 2015·38 cites·21 claims
- 2098US9025357B2Programmable resistive memory unit with data and reference cellsCHUNG SHINE C·Filed 2012·Granted May 5, 2015·48 cites·18 claims
- 2198US9019791B2Low-pin-count non-volatile memory interface for 3D ICCHUNG SHINE C·Filed 2014·Granted Apr 28, 2015·46 cites·27 claims
- 2298US9019742B2Multiple-state one-time programmable (OTP) memory to function as multi-time programmable (MTP) memoryCHUNG SHINE C·Filed 2012·Granted Apr 28, 2015·50 cites·20 claims
- 2398US8988965B2Low-pin-count non-volatile memory interfaceCHUNG SHINE C·Filed 2011·Granted Mar 24, 2015·45 cites·27 claims
- 2498US8929122B2Circuit and system of using a junction diode as program selector for resistive devicesCHUNG SHINE C·Filed 2011·Granted Jan 6, 2015·33 cites·23 claims
- 2598US8923085B2Low-pin-count non-volatile memory embedded in a integrated circuit without any additional pins for accessCHUNG SHINE C·Filed 2014·Granted Dec 30, 2014·56 cites·20 claims
- 2698US8913415B2Circuit and system for using junction diode as program selector for one-time programmable devicesCHUNG SHINE C·Filed 2013·Granted Dec 16, 2014·57 cites·28 claims
- 2798US8913449B2System and method of in-system repairs or configurations for memoriesCHUNG SHINE C·Filed 2012·Granted Dec 16, 2014·67 cites·30 claims
- 2898US8861249B2Circuit and system of a low density one-time programmable memoryCHUNG SHINE C·Filed 2013·Granted Oct 14, 2014·56 cites·17 claims
- 2998US8830720B2Circuit and system of using junction diode as program selector and MOS as read selector for one-time programmable devicesCHUNG SHINE C·Filed 2013·Granted Sep 9, 2014·58 cites·24 claims
- 3098US8804398B2Reversible resistive memory using diodes formed in CMOS processes as program selectorsCHUNG SHINE C·Filed 2011·Granted Aug 12, 2014·41 cites·21 claims
- 3198US6970988B1Algorithm mapping, specialized instructions and architecture features for smart memory computingCHUNG SHINE C·Filed 2002·Granted Nov 29, 2005·134 cites·25 claims
- 3297US9478306B2Circuit and system of using junction diode as program selector for one-time programmable devices with heat sinkCHUNG SHINE C·Filed 2015·Granted Oct 25, 2016·21 cites·28 claims
- 3397US9324849B2Structures and techniques for using semiconductor body to construct SCR, DIAC, or TRIACCHUNG SHINE C·Filed 2012·Granted Apr 26, 2016·30 cites·25 claims
- 3497US9281038B2Low-pin-count non-volatile memory interfaceCHUNG SHINE C·Filed 2014·Granted Mar 8, 2016·28 cites·20 claims
- 3597US9236141B2Circuit and system of using junction diode of MOS as program selector for programmable resistive devicesCHUNG SHINE C·Filed 2014·Granted Jan 12, 2016·27 cites·21 claims
- 3697US9076526B2OTP memories functioning as an MTP memoryCHUNG SHINE C·Filed 2013·Granted Jul 7, 2015·30 cites·21 claims
- 3796US10249379B2One-time programmable devices having program selector for electrical fuses with extended areaCHUNG SHINE C·Filed 2014·Granted Apr 2, 2019·17 cites·35 claims
- 3896US9548109B2Circuit and system of using FinFET for building programmable resistive devicesCHUNG SHINE C·Filed 2014·Granted Jan 17, 2017·21 cites·41 claims
- 3996US9324447B2Circuit and system for concurrently programming multiple bits of OTP memory devicesCHUNG SHINE C·Filed 2013·Granted Apr 26, 2016·26 cites·22 claims
- 4094US8607019B2Circuit and method of a memory compiler based on subtractive approachCHUNG SHINE C·Filed 2012·Granted Dec 10, 2013·21 cites·20 claims
- 4192US9224496B2Circuit and system of aggregated area anti-fuse in CMOS processesCHUNG SHINE C·Filed 2011·Granted Dec 29, 2015·15 cites·17 claims
- 4291US9496033B2Method and system of programmable resistive devices with read capability using a low supply voltageCHUNG SHINE C·Filed 2015·Granted Nov 15, 2016·7 cites·22 claims
- 4389US9251893B2Multiple-bit programmable resistive memory using diode as program selectorCHUNG SHINE C·Filed 2012·Granted Feb 2, 2016·12 cites·19 claims
- 4489US9042153B2Programmable resistive memory unit with multiple cells to improve yield and reliabilityCHUNG SHINE C·Filed 2012·Granted May 26, 2015·12 cites·20 claims
- 4582US9496265B2Circuit and system of a high density anti-fuseCHUNG SHINE C·Filed 2011·Granted Nov 15, 2016·6 cites·21 claims
- 4682US9412473B2System and method of a novel redundancy scheme for OTPCHUNG SHINE C·Filed 2015·Granted Aug 9, 2016·6 cites·21 claims
- 4781US8917533B2Circuit and system for testing a one-time programmable (OTP) memoryCHUNG SHINE C·Filed 2013·Granted Dec 23, 2014·7 cites·19 claims
- 4880US8912576B2Structures and techniques for using semiconductor body to construct bipolar junction transistorsCHUNG SHINE C·Filed 2013·Granted Dec 16, 2014·5 cites·20 claims
- 4977US9824768B2Integrated OTP memory for providing MTP memoryCHUNG SHINE C·Filed 2016·Granted Nov 21, 2017·4 cites·23 claims
- 5076US9711237B2Method and structure for reliable electrical fuse programmingCHUNG SHINE C·Filed 2014·Granted Jul 18, 2017·4 cites·21 claims
Showing the top 50 of 66 patent records by PatentIndex Score.
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