Assignee
CHEN HANHONG
US·12 granted patents·34 citations·filing 2009–2012
Top patents by PatentIndex Score
12 records- 0184US8481384B2Method for producing MIM capacitors with high K dielectric materials and non-noble electrodesCHEN HANHONG·Filed 2011·Granted Jul 9, 2013·6 cites·17 claims
- 0281US8809160B2Methods for forming high-K crystalline films and related devicesCHEN HANHONG·Filed 2011·Granted Aug 19, 2014·4 cites·20 claims
- 0378US8835273B2High temperature ALD process of metal oxide for DRAM applicationsCHEN HANHONG·Filed 2012·Granted Sep 16, 2014·3 cites·18 claims
- 0478US8815677B2Method of processing MIM capacitors to reduce leakage currentCHEN HANHONG·Filed 2011·Granted Aug 26, 2014·5 cites·14 claims
- 0578US8647943B2Enhanced non-noble electrode layers for DRAM capacitor cellCHEN HANHONG·Filed 2012·Granted Feb 11, 2014·4 cites·19 claims
- 0677US8828821B2Fabrication of semiconductor stacks with ruthenium-based materialsCHEN HANHONG·Filed 2009·Granted Sep 9, 2014·5 cites·14 claims
- 0775US8486727B2System and method for step coverage measurementCHEN HANHONG·Filed 2010·Granted Jul 16, 2013·3 cites·20 claims
- 0873US8551851B2Titanium-based high-K dielectric filmsCHEN HANHONG·Filed 2011·Granted Oct 8, 2013·2 cites·3 claims
- 0972US8772123B2Band gap improvement in DRAM capacitorsCHEN HANHONG·Filed 2011·Granted Jul 8, 2014·2 cites·19 claims
- 1051US8574997B2Method of using a catalytic layer to enhance formation of a capacitor stackCHEN HANHONG·Filed 2011·Granted Nov 5, 2013·0 cites·18 claims
- 1149US8765569B2Molybdenum oxide top electrode for DRAM capacitorsCHEN HANHONG·Filed 2011·Granted Jul 1, 2014·0 cites·19 claims
- 1249US8530322B2Method of forming stacked metal oxide layersCHEN HANHONG·Filed 2010·Granted Sep 10, 2013·0 cites·12 claims
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