Assignee
BHALLA ANUP
US·34 granted patents·2 pending applications·416 citations·filing 2005–2017
Top patents by PatentIndex Score
36 records- 0199US8119482B2MOSFET using gate work function engineering for switching applicationsBHALLA ANUP·Filed 2010·Granted Feb 21, 2012·125 cites·12 claims
- 0297US8431989B2Shielded gate trench (SGT) MOSFET devices and manufacturing processesBHALLA ANUP·Filed 2011·Granted Apr 30, 2013·23 cites·19 claims
- 0395US8785279B2High voltage field balance metal oxide field effect transistor (FBM)BHALLA ANUP·Filed 2012·Granted Jul 22, 2014·18 cites·18 claims
- 0495US8507978B2Split-gate structure in trench-based silicon carbide power deviceBHALLA ANUP·Filed 2011·Granted Aug 13, 2013·23 cites·19 claims
- 0595US8110869B2Planar SRFET using no additional masks and layout methodBHALLA ANUP·Filed 2007·Granted Feb 7, 2012·39 cites·2 claims
- 0694US8896131B2Cascode scheme for improved device switching behaviorBHALLA ANUP·Filed 2011·Granted Nov 25, 2014·20 cites·23 claims
- 0794US8597998B2Power MOS device fabricationBHALLA ANUP·Filed 2012·Granted Dec 3, 2013·11 cites·17 claims
- 0892US8093651B2MOS device with integrated schottky diode in active region contact trenchBHALLA ANUP·Filed 2007·Granted Jan 10, 2012·16 cites·9 claims
- 0991US8338860B2Normally off gallium nitride field effect transistors (FET)BHALLA ANUP·Filed 2009·Granted Dec 25, 2012·20 cites·15 claims
- 1090US9324858B2Trench-gated MIS devicesBHALLA ANUP·Filed 2010·Granted Apr 26, 2016·8 cites·20 claims
- 1190US8288229B2Power MOS device fabricationBHALLA ANUP·Filed 2011·Granted Oct 16, 2012·7 cites·20 claims
- 1290US8174283B2Calibration technique for measuring gate resistance of power MOS gate device at wafer levelBHALLA ANUP·Filed 2009·Granted May 8, 2012·12 cites·8 claims
- 1389US8471332B2Enhancing Schottky breakdown voltage (BV) without affecting an integrated MOSFET-Schottky device layoutBHALLA ANUP·Filed 2012·Granted Jun 25, 2013·8 cites·11 claims
- 1489US8450794B2MOS device with varying contact trench lengthsBHALLA ANUP·Filed 2011·Granted May 28, 2013·7 cites·9 claims
- 1589US8163618B2Power MOSFET device structure for high frequency applicationsBHALLA ANUP·Filed 2010·Granted Apr 24, 2012·8 cites·6 claims
- 1688US8963240B2Shielded gate trench (SGT) mosfet devices and manufacturing processesBHALLA ANUP·Filed 2013·Granted Feb 24, 2015·9 cites·16 claims
- 1788US8637368B2Fabrication of MOS device with varying trench depthBHALLA ANUP·Filed 2012·Granted Jan 28, 2014·6 cites·12 claims
- 1887US9024378B2Device structure and manufacturing method using HDP deposited source-body implant blockBHALLA ANUP·Filed 2013·Granted May 5, 2015·7 cites·18 claims
- 1987US8372708B2Device structure and manufacturing method using HDP deposited using deposited source-body implant blockBHALLA ANUP·Filed 2011·Granted Feb 12, 2013·8 cites·17 claims
- 2085US8963233B2Power MOSFET device structure for high frequency applicationsBHALLA ANUP·Filed 2012·Granted Feb 24, 2015·5 cites·7 claims
- 2184US8928079B2MOS device with low injection diodeBHALLA ANUP·Filed 2012·Granted Jan 6, 2015·5 cites·22 claims
- 2283US8253192B2MOS device with varying trench depthBHALLA ANUP·Filed 2011·Granted Aug 28, 2012·4 cites·15 claims
- 2382US9478646B2Methods for fabricating anode shorted field stop insulated gate bipolar transistorBHALLA ANUP·Filed 2011·Granted Oct 25, 2016·4 cites·9 claims
- 2476US8283723B2MOS device with low injection diodeBHALLA ANUP·Filed 2007·Granted Oct 9, 2012·4 cites·24 claims
- 2575US8836015B2Planar SRFET using no additional masks and layout methodBHALLA ANUP·Filed 2012·Granted Sep 16, 2014·4 cites·2 claims
- 2673US8354316B2Reduced mask configuration for power mosfets with electrostatic discharge (ESD) circuit protectionBHALLA ANUP·Filed 2010·Granted Jan 15, 2013·3 cites·10 claims
- 2773US8164199B2Multi-die packageBHALLA ANUP·Filed 2009·Granted Apr 24, 2012·6 cites·17 claims
- 2869US9455249B2Planar srfet using no additional masks and layout methodBHALLA ANUP·Filed 2014·Granted Sep 27, 2016·2 cites·26 claims
- 2967US8502346B2Monolithic IGBT and diode structure for quasi-resonant convertersBHALLA ANUP·Filed 2010·Granted Aug 6, 2013·2 cites·14 claims
- 3065US9257375B2Multi-die semiconductor packageBHALLA ANUP·Filed 2011·Granted Feb 9, 2016·2 cites·17 claims
- 3155US10896968B2Device structure and manufacturing method using HDP deposited source-body implant blockBHALLA ANUP·Filed 2017·Granted Jan 19, 2021·0 cites·6 claims
- 3255US9806175B2Power MOSFET device structure for high frequency applicationsBHALLA ANUP·Filed 2015·Granted Oct 31, 2017·0 cites·7 claims
- 3350US8105895B2Enhancing Schottky breakdown voltage (BV) without affecting an integrated MOSFET-Schottky device layoutBHALLA ANUP·Filed 2011·Granted Jan 31, 2012·0 cites·2 claims
- 3449US9093286B2Monolithic IGBT and diode structure for quai-resonant convertersBHALLA ANUP·Filed 2013·Granted Jul 28, 2015·0 cites·7 claims
- 3548US2011042724A1Trenched mosfets with part of the device formed on a (110) crystal planeBHALLA ANUP·Filed 2005·Application pending·0 cites
- 3644US2012007206A1Structures and methods for forming schottky diodes on a p-substrate or a bottom anode schottky diodeBHALLA ANUP·Filed 2011·Application pending·0 cites
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