Individual holder
BASKER VEERARAGHAVAN S
US·28 granted patents·10 pending applications·336 citations·filing 2007–2012
Individually held — no corporate assignee on record.
Top patents by PatentIndex Score
38 records- 0198US8569152B1Cut-very-last dual-epi flowBASKER VEERARAGHAVAN S·Filed 2012·Granted Oct 29, 2013·65 cites·20 claims
- 0298US8445334B1SOI FinFET with recessed merged Fins and liner for enhanced stress couplingBASKER VEERARAGHAVAN S·Filed 2011·Granted May 21, 2013·41 cites·6 claims
- 0396US8716797B2FinFET spacer formation by oriented implantationBASKER VEERARAGHAVAN S·Filed 2009·Granted May 6, 2014·29 cites·15 claims
- 0496US8455313B1Method for fabricating finFET with merged fins and vertical silicideBASKER VEERARAGHAVAN S·Filed 2012·Granted Jun 4, 2013·28 cites·7 claims
- 0596US8420464B2Spacer as hard mask scheme for in-situ doping in CMOS finFETsBASKER VEERARAGHAVAN S·Filed 2011·Granted Apr 16, 2013·33 cites·7 claims
- 0694US8946791B2Finfet with reduced parasitic capacitanceBASKER VEERARAGHAVAN S·Filed 2012·Granted Feb 3, 2015·20 cites·20 claims
- 0794US8901664B2High-K/metal gate CMOS finFET with improved pFET threshold voltageBASKER VEERARAGHAVAN S·Filed 2011·Granted Dec 2, 2014·17 cites·12 claims
- 0894US8592290B1Cut-very-last dual-EPI flowBASKER VEERARAGHAVAN S·Filed 2012·Granted Nov 26, 2013·16 cites·20 claims
- 0994US8513073B1Silicon germanium channel with silicon buffer regions for fin field effect transistor deviceBASKER VEERARAGHAVAN S·Filed 2012·Granted Aug 20, 2013·23 cites·14 claims
- 1093US8557657B1Retrograde substrate for deep trench capacitorsBASKER VEERARAGHAVAN S·Filed 2012·Granted Oct 15, 2013·12 cites·18 claims
- 1192US8637931B2finFET with merged fins and vertical silicideBASKER VEERARAGHAVAN S·Filed 2011·Granted Jan 28, 2014·13 cites·18 claims
- 1289US8242578B2Anti-fuse device structure and electroplating circuit structure and methodBASKER VEERARAGHAVAN S·Filed 2011·Granted Aug 14, 2012·7 cites·7 claims
- 1386US8674476B2Anti-fuse device structure and electroplating circuit structure and methodBASKER VEERARAGHAVAN S·Filed 2012·Granted Mar 18, 2014·5 cites·15 claims
- 1485US8723262B2SOI FinFET with recessed merged fins and liner for enhanced stress couplingBASKER VEERARAGHAVAN S·Filed 2012·Granted May 13, 2014·6 cites·13 claims
- 1585US8303791B2Apparatus and method for electrochemical processing of thin films on resistive substratesBASKER VEERARAGHAVAN S·Filed 2008·Granted Nov 6, 2012·7 cites·13 claims
- 1677US8877615B2Methods of manufacturing finFET devicesBASKER VEERARAGHAVAN S·Filed 2012·Granted Nov 4, 2014·3 cites·12 claims
- 1769US8933559B2Carbon nanotube structures for enhancement of thermal dissipation from semiconductor modulesBASKER VEERARAGHAVAN S·Filed 2012·Granted Jan 13, 2015·2 cites·15 claims
- 1866US9620619B2Borderless contact structureBASKER VEERARAGHAVAN S·Filed 2012·Granted Apr 11, 2017·2 cites·19 claims
- 1965US8946802B2Method of eDRAM DT strap formation in FinFET device structureBASKER VEERARAGHAVAN S·Filed 2012·Granted Feb 3, 2015·2 cites·18 claims
- 2065US8551313B2Method and apparatus for electroplating on soi and bulk semiconductor wafersBASKER VEERARAGHAVAN S·Filed 2007·Granted Oct 8, 2013·2 cites·17 claims
- 2163US8994085B2Integrated circuit including DRAM and SRAM/logicBASKER VEERARAGHAVAN S·Filed 2012·Granted Mar 31, 2015·1 cites·11 claims
- 2263US8299605B2Carbon nanotube structures for enhancement of thermal dissipation from semiconductor modulesBASKER VEERARAGHAVAN S·Filed 2007·Granted Oct 30, 2012·2 cites·19 claims
- 2354US8847323B2finFET devicesBASKER VEERARAGHAVAN S·Filed 2012·Granted Sep 30, 2014·0 cites·19 claims
- 2454US2012322243A1Apparatus and method for electrochemical processing of thin films on resistive substratesBASKER VEERARAGHAVAN S·Filed 2012·Application pending·0 cites
- 2554US2012318673A1Apparatus and method for electrochemical processing of thin films on resistive substratesBASKER VEERARAGHAVAN S·Filed 2012·Application pending·0 cites
- 2653US8926805B2Method and apparatus for electroplating on SOI and bulk semiconductor wafersBASKER VEERARAGHAVAN S·Filed 2012·Granted Jan 6, 2015·0 cites·5 claims
- 2751US9064744B2Structure and method to realize conformal doping in deep trench applicationsBASKER VEERARAGHAVAN S·Filed 2012·Granted Jun 23, 2015·0 cites·18 claims
- 2850US2014035038A1Structure And Method To Realize Conformal Doping In Deep Trench ApplicationsBASKER VEERARAGHAVAN S·Filed 2012·Application pending·0 cites
- 2949US8703572B2Embeded DRAM cell structures with high conductance electrodes and methods of manufactureBASKER VEERARAGHAVAN S·Filed 2011·Granted Apr 22, 2014·0 cites·9 claims
- 3048US2014087526A1Multi-gate field effect transistor devicesBASKER VEERARAGHAVAN S·Filed 2012·Application pending·0 cites
- 3148US2014054705A1Silicon germanium channel with silicon buffer regions for fin field effect transistor deviceBASKER VEERARAGHAVAN S·Filed 2012·Application pending·0 cites
- 3248US2014084371A1Multi-gate field effect transistor devicesBASKER VEERARAGHAVAN S·Filed 2012·Application pending·0 cites
- 3347US8507187B2Multi-exposure lithography employing a single anti-reflective coating layerBASKER VEERARAGHAVAN S·Filed 2008·Granted Aug 13, 2013·0 cites·16 claims
- 3447US2013316513A1Fin isolation for multigate transistorsBASKER VEERARAGHAVAN S·Filed 2012·Application pending·0 cites
- 3547US2013313649A1Fin isolation for multigate transistorsBASKER VEERARAGHAVAN S·Filed 2012·Application pending·0 cites
- 3646US8927365B2Method of eDRAM DT strap formation in FinFET device structureBASKER VEERARAGHAVAN S·Filed 2012·Granted Jan 6, 2015·0 cites·20 claims
- 3745US2012181613A1Methods for Forming Field Effect Transistor Devices With Protective SpacersBASKER VEERARAGHAVAN S·Filed 2011·Application pending·0 cites
- 3836US2012070947A1Inducing stress in fin-fet deviceBASKER VEERARAGHAVAN S·Filed 2010·Application pending·0 cites
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