Assignee
BAO XUSHENG
SG·2 granted patents·14 citations·filing 2011–2011
Top patents by PatentIndex Score
2 records- 0188US8963326B2Semiconductor device and method of forming patterned repassivation openings between RDL and UBM to reduce adverse effects of electro-migrationBAO XUSHENG·Filed 2011·Granted Feb 24, 2015·13 cites·24 claims
- 0257US9142522B2Semiconductor device and method of forming RDL under bump for electrical connection to enclosed bumpBAO XUSHENG·Filed 2011·Granted Sep 22, 2015·1 cites·19 claims
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