Assignee
AVOLARE 2 LLC
US·4 granted patents·4 pending applications·14 citations·filing 2004–2011
Top patents by PatentIndex Score
8 records- 0187US8022459B2Metal source and drain transistor having high dielectric constant gate insulatorAVOLARE 2 LLC·Filed 2010·Granted Sep 20, 2011·6 cites·20 claims
- 0278US7821075B2CMOS device with zero soft error rateAVOLARE 2 LLC·Filed 2006·Granted Oct 26, 2010·7 cites·20 claims
- 0355US2010032771A1Short-channel schottky-barrier mosfet device and manufacturing methodAVOLARE 2 LLC·Filed 2009·Application pending·0 cites
- 0454US7939902B2Field effect transistor having source and/or drain forming schottky or schottky-like contact with strained semiconductor substrateAVOLARE 2 LLC·Filed 2009·Granted May 10, 2011·0 cites·20 claims
- 0551US2011175160A1Short-channel schottky-barrier mosfet device and method of manufactureAVOLARE 2 LLC·Filed 2011·Application pending·0 cites
- 0650US2010025774A1Schottky barrier integrated circuitAVOLARE 2 LLC·Filed 2009·Application pending·0 cites
- 0750US2010013015A1Metal source/drain schottky barrier silicon-on-nothing mosfet deviceAVOLARE 2 LLC·Filed 2009·Application pending·0 cites
- 0848US7674680B2Transistor having high dielectric constant gate insulating layer and source and drain forming Schottky contact with substrateAVOLARE 2 LLC·Filed 2004·Granted Mar 9, 2010·1 cites·53 claims
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