Assignee
AVOGY INC
US·43 granted patents·26 pending applications·77 citations·filing 2012–2016
Top patents by PatentIndex Score
69 records- 0196US9368582B2High power gallium nitride electronics using miscut substratesAVOGY INC·Filed 2013·Granted Jun 14, 2016·22 cites·10 claims
- 0287US8823140B2GaN vertical bipolar transistorAVOGY INC·Filed 2012·Granted Sep 2, 2014·8 cites·21 claims
- 0386US8947154B1Method and system for operating gallium nitride electronicsAVOGY INC·Filed 2013·Granted Feb 3, 2015·12 cites·19 claims
- 0479US8969180B2Method and system for junction termination in GaN materials using conductivity modulationAVOGY INC·Filed 2014·Granted Mar 3, 2015·3 cites·15 claims
- 0579US8866148B2Vertical GaN power device with breakdown voltage controlAVOGY INC·Filed 2012·Granted Oct 21, 2014·3 cites·11 claims
- 0678US9059199B2Method and system for a gallium nitride vertical transistorAVOGY INC·Filed 2013·Granted Jun 16, 2015·3 cites·7 claims
- 0777US8941117B2Monolithically integrated vertical JFET and Schottky diodeAVOGY INC·Filed 2013·Granted Jan 27, 2015·3 cites·6 claims
- 0873US9369059B2AC-DC converter for wide range output voltage and high switching frequencyAVOGY INC·Filed 2015·Granted Jun 14, 2016·2 cites·18 claims
- 0971US9196679B2Schottky diode with buried layer in GaN materialsAVOGY INC·Filed 2015·Granted Nov 24, 2015·1 cites·22 claims
- 1068US9391179B2Vertical GaN JFET with low gate-drain capacitance and high gate-source capacitanceAVOGY INC·Filed 2015·Granted Jul 12, 2016·1 cites·18 claims
- 1168US8937317B2Method and system for co-packaging gallium nitride electronicsAVOGY INC·Filed 2012·Granted Jan 20, 2015·2 cites·11 claims
- 1267US9318331B2Method and system for diffusion and implantation in gallium nitride based devicesAVOGY INC·Filed 2014·Granted Apr 19, 2016·1 cites·20 claims
- 1367US9171751B2Method and system for fabricating floating guard rings in GaN materialsAVOGY INC·Filed 2014·Granted Oct 27, 2015·1 cites·17 claims
- 1467US8969926B2Vertical GaN JFET with low gate-drain capacitance and high gate-source capacitanceAVOGY INC·Filed 2012·Granted Mar 3, 2015·1 cites·8 claims
- 1567US8853063B2Method and system for carbon doping control in gallium nitride based devicesAVOGY INC·Filed 2013·Granted Oct 7, 2014·1 cites·15 claims
- 1665US9171900B2Method of fabricating a gallium nitride P-i-N diode using implantationAVOGY INC·Filed 2014·Granted Oct 27, 2015·1 cites·20 claims
- 1765US9171937B2Monolithically integrated vertical JFET and Schottky diodeAVOGY INC·Filed 2014·Granted Oct 27, 2015·1 cites·14 claims
- 1862US9159799B2Method of fabricating a merged P-N junction and schottky diode with regrown gallium nitride layerAVOGY INC·Filed 2013·Granted Oct 13, 2015·1 cites·12 claims
- 1962US9123799B2Gallium nitride field effect transistor with buried field plate protected lateral channelAVOGY INC·Filed 2013·Granted Sep 1, 2015·1 cites·13 claims
- 2059US9330918B2Edge termination by ion implantation in gallium nitrideAVOGY INC·Filed 2014·Granted May 3, 2016·0 cites·12 claims
- 2158US9257500B2Vertical gallium nitride power device with breakdown voltage controlAVOGY INC·Filed 2014·Granted Feb 9, 2016·0 cites·14 claims
- 2257US9450112B2GaN-based Schottky barrier diode with algan surface layerAVOGY INC·Filed 2014·Granted Sep 20, 2016·0 cites·12 claims
- 2357US9269793B2Method and system for a gallium nitride self-aligned vertical MESFETAVOGY INC·Filed 2014·Granted Feb 23, 2016·0 cites·21 claims
- 2456US9171923B2Method of fabricating a gallium nitride merged P-i-N Schottky (MPS) diodeAVOGY INC·Filed 2014·Granted Oct 27, 2015·0 cites·18 claims
- 2556US9117850B2Method and system for a gallium nitride vertical JFET with self-aligned source and gateAVOGY INC·Filed 2014·Granted Aug 25, 2015·0 cites·15 claims
- 2656US9089083B2AC-DC converter for wide range output voltage and high switching frequencyAVOGY INC·Filed 2012·Granted Jul 21, 2015·1 cites·16 claims
- 2756US8946725B2Vertical gallium nitride JFET with gate and source electrodes on regrown gateAVOGY INC·Filed 2014·Granted Feb 3, 2015·0 cites·20 claims
- 2856US2017133481A1High power gallium nitride electronics using miscut substratesAVOGY INC·Filed 2016·Application pending·0 cites
- 2955US9484470B2Method of fabricating a GaN P-i-N diode using implantationAVOGY INC·Filed 2015·Granted Nov 1, 2016·0 cites·20 claims
- 3055US9029210B2GaN vertical superjunction device structures and fabrication methodsAVOGY INC·Filed 2014·Granted May 12, 2015·0 cites·9 claims
- 3154US9318619B2Vertical gallium nitride JFET with gate and source electrodes on regrown gateAVOGY INC·Filed 2015·Granted Apr 19, 2016·0 cites·20 claims
- 3254US2016043198A1Schottky diode with buried layer in gan materialsAVOGY INC·Filed 2015·Application pending·0 cites
- 3353US9502544B2Method and system for planar regrowth in GaN electronic devicesAVOGY INC·Filed 2015·Granted Nov 22, 2016·0 cites·22 claims
- 3452US9525039B2Method of fabricating a merged P-N junction and schottky diode with regrown gallium nitride layerAVOGY INC·Filed 2015·Granted Dec 20, 2016·0 cites·7 claims
- 3552US2015206768A1Method and system for co-packaging gallium nitride electronicsAVOGY INC·Filed 2014·Application pending·0 cites
- 3651USD762573SPower supplyAVOGY INC·Filed 2015·Granted Aug 2, 2016·5 cites·1 claims
- 3751US2015263640A1Adaptive synchronous switching in a resonant converterAVOGY INC·Filed 2014·Application pending·0 cites
- 3851US2015102360A1Bondable top metal contacts for gallium nitride power devicesAVOGY INC·Filed 2014·Application pending·0 cites
- 3950US9324844B2Method and system for a GaN vertical JFET utilizing a regrown channelAVOGY INC·Filed 2015·Granted Apr 26, 2016·0 cites·13 claims
- 4050US9287389B2Method and system for doping control in gallium nitride based devicesAVOGY INC·Filed 2015·Granted Mar 15, 2016·0 cites·20 claims
- 4150US2016190296A1Gallium nitride based high electron mobility transistor including an aluminum gallium nitride barrier layerAVOGY INC·Filed 2015·Application pending·0 cites
- 4250US2016190276A1Method and system for in-situ etch and regrowth in gallium nitride based devicesAVOGY INC·Filed 2015·Application pending·0 cites
- 4350US2014203328A1Method and system for a gallium nitride vertical jfet with self-aligned gate metallizationAVOGY INC·Filed 2014·Application pending·0 cites
- 4449US2015263639A1Adaptive synchronous switching in a resonant converterAVOGY INC·Filed 2014·Application pending·0 cites
- 4549US2014051236A1Gan-based schottky barrier diode with field plateAVOGY INC·Filed 2013·Application pending·0 cites
- 4648US9531256B2AC-DC converter with adjustable outputAVOGY INC·Filed 2013·Granted Dec 27, 2016·0 cites·17 claims
- 4748US2016190351A1Method and system for gan vertical jfet utilizing a regrown gateAVOGY INC·Filed 2015·Application pending·0 cites
- 4847US9508838B2InGaN ohmic source contacts for vertical power devicesAVOGY INC·Filed 2015·Granted Nov 29, 2016·0 cites·9 claims
- 4947US2015340449A1Gallium nitride field effect transistor with buried field plate protected lateral channelAVOGY INC·Filed 2015·Application pending·0 cites
- 5047US2015340514A1Method and system for a gallium nitride vertical jfet with self-aligned source and gateAVOGY INC·Filed 2015·Application pending·0 cites
Showing the top 50 of 69 patent records by PatentIndex Score.
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