Individual holder
ADAM THOMAS N
US·23 granted patents·10 pending applications·155 citations·filing 2010–2012
Individually held — no corporate assignee on record.
Top patents by PatentIndex Score
33 records- 0197US9190471B2Semiconductor structure having a source and a drain with reverse facetsADAM THOMAS N·Filed 2012·Granted Nov 17, 2015·35 cites·11 claims
- 0296US8652932B2Semiconductor devices having fin structures, and methods of forming semiconductor devices having fin structuresADAM THOMAS N·Filed 2012·Granted Feb 18, 2014·21 cites·7 claims
- 0395US8946033B2Merged fin finFET with (100) sidewall surfaces and method of making sameADAM THOMAS N·Filed 2012·Granted Feb 3, 2015·21 cites·13 claims
- 0493US8674447B2Transistor with improved sigma-shaped embedded stressor and method of formationADAM THOMAS N·Filed 2012·Granted Mar 18, 2014·10 cites·20 claims
- 0592US9087687B2Thin heterostructure channel deviceADAM THOMAS N·Filed 2011·Granted Jul 21, 2015·10 cites·11 claims
- 0692US8673699B2Semiconductor structure having NFET extension last implantsADAM THOMAS N·Filed 2012·Granted Mar 18, 2014·17 cites·11 claims
- 0790US9059207B2Strained channel for depleted channel semiconductor devicesADAM THOMAS N·Filed 2012·Granted Jun 16, 2015·7 cites·17 claims
- 0886US8232172B2Stress enhanced transistor devices and methods of makingADAM THOMAS N·Filed 2011·Granted Jul 31, 2012·6 cites·6 claims
- 0984US9093260B2Thin hetereostructure channel deviceADAM THOMAS N·Filed 2012·Granted Jul 28, 2015·5 cites·10 claims
- 1084US8263468B2Thin body semiconductor devicesADAM THOMAS N·Filed 2010·Granted Sep 11, 2012·7 cites·14 claims
- 1182US8642415B2Semiconductor substrate with transistors having different threshold voltagesADAM THOMAS N·Filed 2012·Granted Feb 4, 2014·5 cites·9 claims
- 1274US8916443B2Semiconductor device with epitaxial source/drain facetting provided at the gate edgeADAM THOMAS N·Filed 2012·Granted Dec 23, 2014·3 cites·12 claims
- 1373US8946064B2Transistor with buried silicon germanium for improved proximity control and optimized recess shapeADAM THOMAS N·Filed 2011·Granted Feb 3, 2015·3 cites·8 claims
- 1469US8828831B2Epitaxial replacement of a raised source/drainADAM THOMAS N·Filed 2012·Granted Sep 9, 2014·2 cites·16 claims
- 1566US8853750B2FinFET with enhanced embedded stressorADAM THOMAS N·Filed 2012·Granted Oct 7, 2014·1 cites·25 claims
- 1665US8415253B2Low-temperature in-situ removal of oxide from a silicon surface during CMOS epitaxial processingADAM THOMAS N·Filed 2011·Granted Apr 9, 2013·1 cites·17 claims
- 1765US8080451B2Fabricating semiconductor structuresADAM THOMAS N·Filed 2010·Granted Dec 20, 2011·1 cites·19 claims
- 1852US8866227B2Thin semiconductor-on-insulator MOSFET with co-integrated silicon, silicon germanium and silicon doped with carbon channelsADAM THOMAS N·Filed 2012·Granted Oct 21, 2014·0 cites·5 claims
- 1951US2013200459A1Strained channel for depleted channel semiconductor devicesADAM THOMAS N·Filed 2012·Application pending·0 cites
- 2049US2013099318A1Thin semiconductor-on-insulator mosfet with co-integrated silicon, silicon germanium and silicon doped with carbon channelsADAM THOMAS N·Filed 2011·Application pending·0 cites
- 2147US8716037B2Measurement of CMOS device channel strain by X-ray diffractionADAM THOMAS N·Filed 2010·Granted May 6, 2014·0 cites·15 claims
- 2247US2012326168A1Transistor with buried silicon germanium for improved proximity control and optimized recess shapeADAM THOMAS N·Filed 2012·Application pending·0 cites
- 2347US2013292766A1Semiconductor substrate with transistors having different threshold voltagesADAM THOMAS N·Filed 2012·Application pending·0 cites
- 2446US8728897B2Power sige heterojunction bipolar transistor (HBT) with improved drive current by strain compensationADAM THOMAS N·Filed 2012·Granted May 20, 2014·0 cites·17 claims
- 2543US8507354B2On-chip capacitors in combination with CMOS devices on extremely thin semiconductor on insulator (ETSOI) substratesADAM THOMAS N·Filed 2011·Granted Aug 13, 2013·0 cites·10 claims
- 2642US9059323B2Method of forming fin-field effect transistor (finFET) structureADAM THOMAS N·Filed 2012·Granted Jun 16, 2015·0 cites·20 claims
- 2742US9053939B2Heterojunction bipolar transistor with epitaxial emitter stack to improve vertical scalingADAM THOMAS N·Filed 2011·Granted Jun 9, 2015·0 cites·18 claims
- 2841US2013207226A1Recessed device region in epitaxial insulating layerADAM THOMAS N·Filed 2012·Application pending·0 cites
- 2940US2013193492A1Silicon carbon film structure and methodADAM THOMAS N·Filed 2012·Application pending·0 cites
- 3039US2012295417A1Selective epitaxial growth by incubation time engineeringADAM THOMAS N·Filed 2011·Application pending·0 cites
- 3139US2012305940A1Defect Free Si:C Epitaxial GrowthADAM THOMAS N·Filed 2011·Application pending·0 cites
- 3239US2013270638A1Strained soi finfet on epitaxially grown boxADAM THOMAS N·Filed 2012·Application pending·0 cites
- 3337US2012205716A1Epitaxially Grown Extension Regions for Scaled CMOS DevicesADAM THOMAS N·Filed 2011·Application pending·0 cites
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