Individual holder
ABRAHAM DAVID W
US·9 granted patents·4 pending applications·45 citations·filing 2008–2012
Individually held — no corporate assignee on record.
Top patents by PatentIndex Score
13 records- 0191US8852762B2Magnetic random access memory with synthetic antiferromagnetic storage layers and non-pinned reference layersABRAHAM DAVID W·Filed 2012·Granted Oct 7, 2014·12 cites·6 claims
- 0288US8754491B2Spin torque MRAM using bidirectional magnonic writingABRAHAM DAVID W·Filed 2011·Granted Jun 17, 2014·13 cites·8 claims
- 0382US8456895B2Magnonic magnetic random access memory deviceABRAHAM DAVID W·Filed 2011·Granted Jun 4, 2013·8 cites·16 claims
- 0479US9015927B2Method for fabricating synthetic antiferromagnetic (SAF) deviceABRAHAM DAVID W·Filed 2012·Granted Apr 28, 2015·4 cites·18 claims
- 0575US8456894B2Noncontact writing of nanometer scale magnetic bits using heat flow induced spin torque effectABRAHAM DAVID W·Filed 2011·Granted Jun 4, 2013·5 cites·24 claims
- 0670US8105850B1Process for selectively patterning a magnetic film structureABRAHAM DAVID W·Filed 2010·Granted Jan 31, 2012·3 cites·9 claims
- 0755US8158190B2Low magnetization materials for high performance magnetic memory devicesABRAHAM DAVID W·Filed 2008·Granted Apr 17, 2012·0 cites·4 claims
- 0854US8535953B2Process for selectively patterning a magnetic film structureABRAHAM DAVID W·Filed 2012·Granted Sep 17, 2013·0 cites·10 claims
- 0954US2009207653A1Memory storage device with heating elementABRAHAM DAVID W·Filed 2008·Application pending·0 cites
- 1050US2014037991A1Magnetic random access memory with synthetic antiferromagnetic storage layersABRAHAM DAVID W·Filed 2012·Application pending·0 cites
- 1144US8852677B2Magnetic random access memory with synthetic antiferromagnetic storage layers and non-pinned reference layersABRAHAM DAVID W·Filed 2012·Granted Oct 7, 2014·0 cites·6 claims
- 1242US2014037992A1Magnetic random access memory with synthetic antiferromagnetic storage layersABRAHAM DAVID W·Filed 2012·Application pending·0 cites
- 1342US2014038310A1Magnetic random access memory with synthetic antiferromagnetic storage layersABRAHAM DAVID W·Filed 2012·Application pending·0 cites
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