Assignee
ABEDIFARD EBRAHIM
US·10 granted patents·1 pending application·50 citations·filing 2005–2015
Top patents by PatentIndex Score
11 records- 0191US8238145B2Shared transistor in a spin-torque transfer magnetic random access memory (STTMRAM) cellABEDIFARD EBRAHIM·Filed 2010·Granted Aug 7, 2012·14 cites·6 claims
- 0289US8295083B2Method and apparatus for increasing the reliability of an access transitor coupled to a magnetic tunnel junction (MTJ)ABEDIFARD EBRAHIM·Filed 2010·Granted Oct 23, 2012·9 cites·25 claims
- 0381US8953396B2NAND interfaceABEDIFARD EBRAHIM·Filed 2011·Granted Feb 10, 2015·6 cites·27 claims
- 0481US8148174B1Magnetic tunnel junction (MTJ) formation with two-step processABEDIFARD EBRAHIM·Filed 2011·Granted Apr 3, 2012·5 cites·20 claims
- 0578US8670264B1Multi-port magnetic random access memory (MRAM)ABEDIFARD EBRAHIM·Filed 2012·Granted Mar 11, 2014·5 cites·7 claims
- 0678US8644060B2Method of sensing data of a magnetic random access memories (MRAM)ABEDIFARD EBRAHIM·Filed 2012·Granted Feb 4, 2014·6 cites·7 claims
- 0775US8313960B1Magnetic tunnel junction (MTJ) formation using multiple etching processesABEDIFARD EBRAHIM·Filed 2012·Granted Nov 20, 2012·3 cites·17 claims
- 0863US8724378B2Shared transistor in a spin-torque transfer magnetic random access memory (STTMRAM) cellABEDIFARD EBRAHIM·Filed 2012·Granted May 13, 2014·2 cites·11 claims
- 0947US9520174B2Method and apparatus for writing to a magnetic tunnel junction (MTJ) by applying incrementally increasing voltage levelABEDIFARD EBRAHIM·Filed 2015·Granted Dec 13, 2016·0 cites·3 claims
- 1046US9070458B2Method and apparatus for writing to a magnetic tunnel junction (MTJ) by applying incrementally increasing voltage levelABEDIFARD EBRAHIM·Filed 2012·Granted Jun 30, 2015·0 cites·3 claims
- 1138US2006095808A1Method and apparatus for using internal delays for adjusting setup and hold times in a memory deviceABEDIFARD EBRAHIM·Filed 2005·Application pending·0 cites
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