Assignee
ZING SEMICONDUCTOR CORP
CN·40 granted patents·53 pending applications·31 citations·filing 2016–2025
Top patents by PatentIndex Score
93 records- 0192US9834861B2Method for growing monocrystalline silicon and monocrystalline silicon ingot prepared thereofZING SEMICONDUCTOR CORP·Filed 2016·Granted Dec 5, 2017·3 cites·10 claims
- 0291US9972637B2Metal-ono-vacuum tube charge trap flash (VTCTF) nonvolatile memory and the method for making the sameZING SEMICONDUCTOR CORP·Filed 2017·Granted May 15, 2018·5 cites·5 claims
- 0390US12092588B2Method for characterizing defects in silicon crystalZING SEMICONDUCTOR CORP·Filed 2022·Granted Sep 17, 2024·1 cites·8 claims
- 0487US9647067B1FinFET and fabrication method thereofZING SEMICONDUCTOR CORP·Filed 2016·Granted May 9, 2017·5 cites·16 claims
- 0585US12046520B2Method for detecting temperature of thermal chamberZING SEMICONDUCTOR CORP·Filed 2023·Granted Jul 23, 2024·1 cites·7 claims
- 0684US11923254B2Method for detecting temperature of thermal chamberZING SEMICONDUCTOR CORP·Filed 2021·Granted Mar 5, 2024·2 cites·7 claims
- 0784US10100431B2Method for growing monocrystalline silicon and monocrystalline silicon ingot prepared thereofZING SEMICONDUCTOR CORP·Filed 2016·Granted Oct 16, 2018·2 cites·9 claims
- 0881US9773891B1FinFET and fabrication method thereofZING SEMICONDUCTOR CORP·Filed 2016·Granted Sep 26, 2017·3 cites·18 claims
- 0980US9837517B2Method for making III-V nanowire quantum well transistorZING SEMICONDUCTOR CORP·Filed 2017·Granted Dec 5, 2017·2 cites·8 claims
- 1079US9779999B2Complementary nanowire semiconductor device and fabrication method thereofZING SEMICONDUCTOR CORP·Filed 2016·Granted Oct 3, 2017·2 cites·8 claims
- 1179US2026085450A1Crystal growing apparatus and rf-soi substrateZING SEMICONDUCTOR CORP·Filed 2025·Application pending·0 cites
- 1278US9640615B1Method for making III-V nanowire quantum well transistorZING SEMICONDUCTOR CORP·Filed 2016·Granted May 2, 2017·2 cites·11 claims
- 1373US12474277B2Method for determining types of defects in monocrystalline silicon waferZING SEMICONDUCTOR CORP·Filed 2023·Granted Nov 18, 2025·0 cites·10 claims
- 1470US9721846B1Hybrid integration fabrication of nanowire gate-all-around GE PFET and polygonal III-V PFET CMOS deviceZING SEMICONDUCTOR CORP·Filed 2016·Granted Aug 1, 2017·1 cites·5 claims
- 1567US9634133B1Method of forming fin structure on patterned substrate that includes depositing quantum well layer over fin structureZING SEMICONDUCTOR CORP·Filed 2016·Granted Apr 25, 2017·1 cites·25 claims
- 1667US9634151B1High voltage junctionless field effect device and its method of fabricationZING SEMICONDUCTOR CORP·Filed 2016·Granted Apr 25, 2017·1 cites·15 claims
- 1764US12398485B2Method of detecting crystallographic defects and method of growing an ingotZING SEMICONDUCTOR CORP·Filed 2022·Granted Aug 26, 2025·0 cites·9 claims
- 1864US2024218564A1Crystal growing method, apparatus and rf-soi substrateZING SEMICONDUCTOR CORP·Filed 2023·Application pending·0 cites
- 1963US12334403B2Measuring method of resistivity of a waferZING SEMICONDUCTOR CORP·Filed 2021·Granted Jun 17, 2025·0 cites·8 claims
- 2063US2024218556A1Method, apparatus, system and computer storage medium of controlling crystal growthZING SEMICONDUCTOR CORP·Filed 2023·Application pending·0 cites
- 2163US2024096645A1Soi waferZING SEMICONDUCTOR CORP·Filed 2023·Application pending·0 cites
- 2257US10014210B2SOI substrate and manufacturing method thereofZING SEMICONDUCTOR CORP·Filed 2017·Granted Jul 3, 2018·0 cites·3 claims
- 2356US2025109521A1Method and apparatus for diameter measurement of czochralski monocrystalline silicon, and device for growing czochralski monocrystalline siliconZING SEMICONDUCTOR CORP·Filed 2024·Application pending·0 cites
- 2455US12400917B2Method for verification of conductivity type of silicon waferZING SEMICONDUCTOR CORP·Filed 2021·Granted Aug 26, 2025·0 cites·6 claims
- 2555US2023134308A1Soi wafer and method of final processing the sameZING SEMICONDUCTOR CORP·Filed 2022·Application pending·0 cites
- 2655US2024387171A1Structure of high-resistivity silicon-on-insulator embedded with charge capture layer and manufacture thereofZING SEMICONDUCTOR CORP·Filed 2024·Application pending·0 cites
- 2754US11624123B2Method and apparatus of monocrystal growthZING SEMICONDUCTOR CORP·Filed 2021·Granted Apr 11, 2023·0 cites·6 claims
- 2854US10553496B2Complementary metal-oxide-semiconductor field-effect transistor and method thereofZING SEMICONDUCTOR CORP·Filed 2017·Granted Feb 4, 2020·0 cites·8 claims
- 2954US9793285B2Metal-ono-vacuum tube charge trap flash (VTCTF) nonvolatile memory and the method for making the sameZING SEMICONDUCTOR CORP·Filed 2016·Granted Oct 17, 2017·0 cites·9 claims
- 3054US2024387241A1Structure of high-resistivity silicon-on-insulator embedded with charge capture layer and manufacture thereofZING SEMICONDUCTOR CORP·Filed 2024·Application pending·0 cites
- 3154US2023323561A1Method of growing a single-crystal siliconZING SEMICONDUCTOR CORP·Filed 2022·Application pending·0 cites
- 3252US11662326B2Method for calculating liquid-solid interface morphology during growth of ingotZING SEMICONDUCTOR CORP·Filed 2021·Granted May 30, 2023·0 cites·6 claims
- 3352US11479874B2Semiconductor crystal growth apparatusZING SEMICONDUCTOR CORP·Filed 2020·Granted Oct 25, 2022·0 cites·8 claims
- 3452US11401626B2Seeding method for crystal growthZING SEMICONDUCTOR CORP·Filed 2021·Granted Aug 2, 2022·0 cites·7 claims
- 3552US9972543B2Complementary nanowire semiconductor device and fabrication method thereofZING SEMICONDUCTOR CORP·Filed 2017·Granted May 15, 2018·0 cites·7 claims
- 3651US2021071313A1Crystal growth apparatusZING SEMICONDUCTOR CORP·Filed 2020·Application pending·0 cites
- 3751US2021071314A1Semiconductor crystal growth apparatusZING SEMICONDUCTOR CORP·Filed 2020·Application pending·0 cites
- 3851US2017271211A1Hybrid integration fabrication of nanowire gate-all-around ge pfet and polygonal iii-v pfet cmos deviceZING SEMICONDUCTOR CORP·Filed 2017·Application pending·0 cites
- 3951US2021071316A1Crystal growth apparatusZING SEMICONDUCTOR CORP·Filed 2020·Application pending·0 cites
- 4050US12000060B2Semiconductor crystal growth method and deviceZING SEMICONDUCTOR CORP·Filed 2020·Granted Jun 4, 2024·0 cites·7 claims
- 4150US9875943B2Complementary metal-oxide-semiconductor field-effect transistor and method thereofZING SEMICONDUCTOR CORP·Filed 2016·Granted Jan 23, 2018·0 cites·12 claims
- 4250US9647107B1Fabrication method for forming vertical transistor on hemispherical or polygonal patterned semiconductor substrateZING SEMICONDUCTOR CORP·Filed 2016·Granted May 9, 2017·0 cites·4 claims
- 4350US2017222049A1Vertical transistor and the fabrication methodZING SEMICONDUCTOR CORP·Filed 2017·Application pending·0 cites
- 4450US2024191393A1Epitaxy susceptor, epitaxy growth apparatus and manufacturing method of semiconductor deviceZING SEMICONDUCTOR CORP·Filed 2023·Application pending·0 cites
- 4549US11393712B2Silicon on insulator structure and method of making the sameZING SEMICONDUCTOR CORP·Filed 2021·Granted Jul 19, 2022·0 cites·10 claims
- 4649US2017222034A1METHOD FOR FORMATION OF VERTICAL CYLINDRICAL GaN QUANTUM WELL TRANSISTORZING SEMICONDUCTOR CORP·Filed 2017·Application pending·0 cites
- 4749US2017256440A1Soi substrate and manufacturing method thereofZING SEMICONDUCTOR CORP·Filed 2016·Application pending·0 cites
- 4849US2021140064A1Semiconductor crystal growth apparatusZING SEMICONDUCTOR CORP·Filed 2020·Application pending·0 cites
- 4949US2021140065A1Semiconductor crystal growth apparatusZING SEMICONDUCTOR CORP·Filed 2020·Application pending·0 cites
- 5049US2020149185A1Reflective screen of a monocrystal growth furnace and the monocrystal growth furnaceZING SEMICONDUCTOR CORP·Filed 2019·Application pending·0 cites
Showing the top 50 of 93 patent records by PatentIndex Score.
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