Assignee
VINET MAUD
FR·9 granted patents·12 citations·filing 2007–2012
Top patents by PatentIndex Score
9 records- 0179US8399316B2Method for making asymmetric double-gate transistorsVINET MAUD·Filed 2007·Granted Mar 19, 2013·6 cites·15 claims
- 0266US9112014B2Transistor with counter-electrode connection amalgamated with the source/drain contactVINET MAUD·Filed 2010·Granted Aug 18, 2015·2 cites·12 claims
- 0366US8115503B2Device for measuring metal/semiconductor contact resistivityVINET MAUD·Filed 2008·Granted Feb 14, 2012·2 cites·19 claims
- 0460US8105906B2Method for fabricating asymmetric double-gate transistors by which asymmetric and symmetric double-gate transistors can be made on the same substrateVINET MAUD·Filed 2007·Granted Jan 31, 2012·1 cites·17 claims
- 0559US8722499B2Method for fabricating a field effect device with weak junction capacitanceVINET MAUD·Filed 2012·Granted May 13, 2014·1 cites·5 claims
- 0651US8324057B2Method for fabricating asymmetric double-gate transistors by which asymmetric and symmetric double-gate transistors can be made on the same substrateVINET MAUD·Filed 2007·Granted Dec 4, 2012·0 cites·16 claims
- 0751US8232168B2Method for making asymmetric double-gate transistors by which asymmetric and symmetric double-gate transistors can be made on the same substrateVINET MAUD·Filed 2007·Granted Jul 31, 2012·0 cites·16 claims
- 0842US9396984B2Method of producing a microelectronic device in a monocrystalline semiconductor substrate with isolation trenches partially formed under an active regionVINET MAUD·Filed 2012·Granted Jul 19, 2016·0 cites·12 claims
- 0942US8994142B2Field effect transistor with offset counter-electrode contactVINET MAUD·Filed 2012·Granted Mar 31, 2015·0 cites·7 claims
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